| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BDX54A |
Darlington 8A complementary silicon medium-power PNP transistor 65W |
Motorola |
| 62 |
BDX54B |
Darlington Complementary Power PNP 8A 80V 65W |
ON Semiconductor |
| 63 |
BDX54C |
Darlington 8A Compementary Silicon Power PNP 100V 65W |
ON Semiconductor |
| 64 |
JO2017 |
NPN Silicon UHF Power Transistor 23Vcc 65W |
Motorola |
| 65 |
MJE105 |
Medium-Power PNP Silicon Transistor 50V 65W 5A, complementary to NPN MJE205 |
Motorola |
| 66 |
MJE105K |
5A Medium-Power PNP Silicon Transistor 50V 65W |
Motorola |
| 67 |
MJE12007 |
2.5A NPN siicon horizontal deflection power transistor 1500V 65W |
Motorola |
| 68 |
MJE205 |
5A Medium Power NPN silicon transistor, 50V, 65W, complementary to PNP MJE105 |
Motorola |
| 69 |
MJE205K |
5A Medium-Power NPN Silicon Transistor 50V 65W |
Motorola |
| 70 |
PH2729-65M |
Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty 2.7 - 2.9 GHz |
Tyco Electronics |
| 71 |
PH3134-65M |
Radar Pulsed Power Transistor, 65W, 1OOms Pulse, 10% Duty 3.1 - 3.4 GHz |
Tyco Electronics |
| 72 |
RCA9202A |
4A N-P-N darlington power transistor. 300V, 65W. |
General Electric Solid State |
| 73 |
RCA9202B |
4A N-P-N darlington power transistor. 350V, 65W. |
General Electric Solid State |
| 74 |
RCA9202C |
4A N-P-N darlington power transistor. 400V, 65W. |
General Electric Solid State |
| 75 |
TIP120 |
8A N-P-N darlington power transistor. 60V, 65W. |
General Electric Solid State |
| 76 |
TIP120 |
NPN Silicon Power Transistor 65W |
National Semiconductor |
| 77 |
TIP121 |
8A N-P-N darlington power transistor. 80V, 65W. |
General Electric Solid State |
| 78 |
TIP121 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 79 |
TIP122 |
8A N-P-N darlington power transistor. 100V, 65W. |
General Electric Solid State |
| 80 |
TIP122 |
NPN, silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 81 |
TIP125 |
8A P-N-P darlington power transistor. -60V, 65W. |
General Electric Solid State |
| 82 |
TIP125 |
PNP Silicon Power Transistor 65W |
National Semiconductor |
| 83 |
TIP126 |
8A P-N-P darlington power transistor. -80V, 65W. |
General Electric Solid State |
| 84 |
TIP127 |
8A P-N-P darlington power transistor. -100V, 65W. |
General Electric Solid State |
| 85 |
TIP127 |
PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. |
USHA India LTD |
| 86 |
TIP41 |
6A complementary silicon power NPN transistor 65W |
Motorola |
| 87 |
TIP41 |
NPN Silicon Power Transistor 65W |
National Semiconductor |
| 88 |
TIP41A |
NPN Silicon Power Transistor 65W |
National Semiconductor |
| 89 |
TIP41B |
NPN Silicon Power Transistor 65W |
National Semiconductor |
| 90 |
TIP41C |
NPN Silicon Power Transistor 65W |
National Semiconductor |
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