| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AN1102 |
ST10 DIRECT MEMORY ACCESS USING MAC - APP NOTE - REV A - 5/11/98 |
SGS Thomson Microelectronics |
| 62 |
ATA7603 |
The ANADIGICS ATA7603 is a -5.2V high-speed transimpedance amplifier (TIA) designed for 10 Gb/s optical receiver applications available ... |
Anadigics Inc |
| 63 |
ATA7609 |
The ANADIGICS ATA7609 is a -5.2 V high-speed transimpedance amplifier (TIA) designed for 10 Gb/s optical receiver applications available ... |
Anadigics Inc |
| 64 |
BTW69-1200N |
50 A - 1200 V non-insulated SCR thyristor |
ST Microelectronics |
| 65 |
BYV52-200FY1 |
Aerospace 30 A - 200 V fast recovery rectifier |
ST Microelectronics |
| 66 |
BYV52HR |
Aerospace 30 A - 200 V fast recovery rectifier |
ST Microelectronics |
| 67 |
BYV54HR |
Aerospace 30 A - 200 V power fast rectifier |
ST Microelectronics |
| 68 |
BYV54S200HY1 |
Aerospace 30 A - 200 V power fast rectifier |
ST Microelectronics |
| 69 |
BYV54S200HYG |
Aerospace 30 A - 200 V power fast rectifier |
ST Microelectronics |
| 70 |
BYV54S200HYT |
Aerospace 30 A - 200 V power fast rectifier |
ST Microelectronics |
| 71 |
BYW81-200C2FY1 |
Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier |
ST Microelectronics |
| 72 |
BYW81-200SG |
Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier |
ST Microelectronics |
| 73 |
BYW81HR |
Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier |
ST Microelectronics |
| 74 |
DIPA |
DIP A - 14 lead plastic split DIP with copper insert - Outline drawings |
SGS-ATES |
| 75 |
IRF740 |
N - CHANNEL 400V - 0.48 Ohm - 10 A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 76 |
IRF740S |
N - CHANNEL 400V - 0.48 Ohm -10 A -D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 77 |
IRF820 |
N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 78 |
IRFP460 |
N - CHANNEL 500V - 0.22 Ohm - 20 A - TO-247 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 79 |
STB15NM60ND |
N-channel 600 V - 0.27 Ohm - 14 A - FDmesh II Power MOSFET D2PAK - Power MOSFET |
ST Microelectronics |
| 80 |
STB21NK50Z |
N-channel 500 V - 0.23 Y - 17 A - D2PAK Zener-protected superMESHTM MOSFET |
ST Microelectronics |
| 81 |
STB24NM65N |
N-channel 650 V - 0.16 Y - 19 A - TO-220/FP - D2/I2PAK - TO-247 second generation MDmesh™ Power MOSFET |
ST Microelectronics |
| 82 |
STB3NB60 |
N-CHANNEL 600V - 3.3 OHM - 3.3 A - D2PAK/I2PAK POWERMESH MOSFET |
ST Microelectronics |
| 83 |
STB3NB60T4 |
N-CHANNEL 600V - 3.3 OHM - 3.3 A - D2PAK/I2PAK POWERMESH MOSFET |
ST Microelectronics |
| 84 |
STC03DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 3 A - 0.55 Ohm |
ST Microelectronics |
| 85 |
STC03DE170 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1700 V - 3 A - 0.55 Ohm |
ST Microelectronics |
| 86 |
STC03DE220HP |
Hybrid emitter switched bipolar transistor ESBT� 2200 V - 3 A - 0.33 � |
ST Microelectronics |
| 87 |
STC03DE220HV |
Hybrid emitter switched bipolar transistor ESBT� 2200 V - 3 A - 0.33 � |
ST Microelectronics |
| 88 |
STC04IE170HP |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
| 89 |
STC04IE170HV |
Monolithic emitter switched bipolar transistor ESBT� 1700 V - 4 A - 0.17 � |
ST Microelectronics |
| 90 |
STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm |
ST Microelectronics |
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