| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 62 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 63 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 64 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 65 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 66 |
1N4370 |
Silicon alloy junction voltage regulator diodes 2.4V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 67 |
1N4370A |
Silicon alloy junction voltage regulator diodes 2.4V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 68 |
1N4371 |
Silicon alloy junction voltage regulator diodes 2.7V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 69 |
1N4371A |
Silicon alloy junction voltage regulator diodes 2.7V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 70 |
1N4372 |
Silicon alloy junction voltage regulator diodes 3.0V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 71 |
1N4372A |
Silicon alloy junction voltage regulator diodes 3.0V 400mW, available according to MIL-S19500/127 |
Texas Instruments |
| 72 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
| 73 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
| 74 |
1S144 |
Silicon Alloy junction meter protection diode |
TOSHIBA |
| 75 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 76 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 77 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 78 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 79 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 80 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 81 |
2-AC128 |
PNP germanium alloy transistor |
TUNGSRAM |
| 82 |
2-AC128K |
PNP germanium alloy transistor |
TUNGSRAM |
| 83 |
2-GD607 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 84 |
2-GD608 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 85 |
2-GD609 |
Germanium alloy NPN transistor 4W |
Tesla Elektronicke |
| 86 |
250UC11 |
Silicon alloy-diffused junction high-current rectifier 1600V 250A |
TOSHIBA |
| 87 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
| 88 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 89 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 90 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
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