| No. |
Part Name |
Description |
Manufacturer |
| 61 |
AT76C111 |
A highly Integrated Solution for Digital Cameras. It combines a number of functions that are required in implementing digital cameras. |
Atmel |
| 62 |
AT76C112 |
A highly integrated solution for Digital Cameras and image playback devices. It includes JPEG decompression with DSP scaling. Can support motion playing files that are JPEG based. |
Atmel |
| 63 |
AT77C101B |
Thermal Fingerprint Sensor with 0.4 mm X 14 mm (0.02" x 0.55") sensing area and digital output (on-chip ADC) |
Atmel |
| 64 |
AT90SC19236RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 192K Byte ROM, 36K Byte EEPROM programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out |
Atmel |
| 65 |
AT90SC19272RC |
Low-power, high-performance, 8-/16-bit secure microcontroller with 192K Byte ROM and 72K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side chan |
Atmel |
| 66 |
AT90SC25672R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe |
Atmel |
| 67 |
AT90SC25672RT |
Low-power, High performance 8-bit/16-bit secure microcontroller with 256K Byte ROM, 72K Byte EEPROM. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out of bounds" detectors, side channe |
Atmel |
| 68 |
AT90SC4802R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 48K Byte ROM, 2K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
| 69 |
AT90SC4816RS |
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann |
Atmel |
| 70 |
AT90SC6404R |
Low-power, High Performance 8-bit/16-bit secure microcontroller with 64K Byte ROM, 4K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
| 71 |
AT90SC9608RC |
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 8K Byte EEPROM. Security Features: OTP (one time programmable) EEPROM area, RNG (Random Number Generator), "out of bounds" detectors, side channel attack co |
Atmel |
| 72 |
AT90SC9636R |
Low-power, High performance 8-bit/16-bit secure microcontroller with 96K Byte ROM, 36K Byte EEPROM, programmable internal oscillator. Security Features: MMU, MED, OTP (one time programmable) EEPROM area, RN (Random Number Generator), "out |
Atmel |
| 73 |
ATL25 |
The ATL25 series gate array and embedded array families from Atmel are fabricated on a 0.25 micron CMOS process with 5 levels of metal. This family features arrays with up to 6.9 million routable gates and 976 pins. The high density and hi |
Atmel |
| 74 |
ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. |
Atmel |
| 75 |
ATL60 |
The ATL60 series CMOS Gate Arrays are fabricated using a 0.6 micron drawn gate, oxide isolated, triple level metal process. Extensive cell libraries are available and support the major CAD software tools. |
Atmel |
| 76 |
AWT6301 |
The AWT6301 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ... |
Anadigics Inc |
| 77 |
AWT6302 |
The AWT6302 meets the increasing demands for higher efficiency and linearity in AMPS/CDMA 1X handsets, while reducing pcb area by ... |
Anadigics Inc |
| 78 |
B625D |
Operational amplifier with TTL output, extended temperature area, possibly equivalent TCA325A |
RFT |
| 79 |
BA726 |
Temperature-controlled transistor area |
IPRS Baneasa |
| 80 |
BA726 |
βA726 Thermostated transistor area |
IPRS Baneasa |
| 81 |
BA726 |
βA726 Thermostated area of transistors |
IPRS Baneasa |
| 82 |
BFQ51 |
Silicon wideband PNP transistor, NPN complements are BFR90 and BFR90A |
Philips |
| 83 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 84 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 85 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 86 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 87 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 88 |
C4258-01 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 89 |
C4258-02 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
| 90 |
C4258-03 |
Infrared power supply; fast response of 50ps; active area: 0.2mm x 0.2mm; picosecond photodetector |
Hamamatsu Corporation |
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