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Datasheets for C

Datasheets found :: 1332
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No. Part Name Description Manufacturer
61 1.5KE400A GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 380V(min), 420V(max). For bidirectional use C or CA suffix. Rectron Semiconductor
62 1002M Low level Class C transistor designed for avionics driver applications SGS Thomson Microelectronics
63 1002MP Low level Class C transistor designed for avionics driver applications SGS Thomson Microelectronics
64 1011-050 High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications SGS Thomson Microelectronics
65 1011-055 High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications SGS Thomson Microelectronics
66 1011-060 High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output SGS Thomson Microelectronics
67 1011-175 High power Class C transistor SGS Thomson Microelectronics
68 1011-225 High power Class C transistor designed for L-Band Avionics applications SGS Thomson Microelectronics
69 1011-350 High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications SGS Thomson Microelectronics
70 1132-5 450-512MHz CLASS C 12.5V 0.6W NPN transistor for mobile applications SGS Thomson Microelectronics
71 1474 Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz SGS Thomson Microelectronics
72 1496-3 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
73 1618-35 CW Class C > 1 GHz Microsemi
74 1718-32L CW Class C > 1 GHz Microsemi
75 1719-20 CW Class C > 1 GHz Microsemi
76 1719-35 CW Class C > 1 GHz Microsemi
77 1819-35 CW Class C > 1 GHz Microsemi
78 1N5155 Silicon planar epitaxial varactor diode for use in multipliers up to C band Mullard
79 1N5157 Silicon planar epitaxial varactor diode for use in multipliers C up to X band Mullard
80 1N5391G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. Jinan Gude Electronic Device
81 1N5392G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. Jinan Gude Electronic Device
82 1N5393G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. Jinan Gude Electronic Device
83 1N5395G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. Jinan Gude Electronic Device
84 1N5397G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. Jinan Gude Electronic Device
85 1N5398G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. Jinan Gude Electronic Device
86 1N5399G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. Jinan Gude Electronic Device
87 2001 CW Class C > 1 GHz Microsemi
88 2001 2GHz 1W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
89 2003 CW Class C > 1 GHz Microsemi
90 2003 2GHz 3W 28V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics


Datasheets found :: 1332
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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