| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N38B |
Diode Forward Ref. Stabistor 1.75V 2-Pin DO-35 |
New Jersey Semiconductor |
| 62 |
BA243 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 63 |
BA244 |
Silicon Switching Diode, the forward resistance is constant and very little |
IPRS Baneasa |
| 64 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 65 |
BAR63-02W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
Siemens |
| 66 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 67 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 68 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 69 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 70 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 71 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 72 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 73 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 74 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 75 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 76 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 77 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 78 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 79 |
BAT18-04 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 80 |
BAT18-05 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 81 |
BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 82 |
FR801R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 50V. Maximum average forward rectified current 8.0A. |
Bytes |
| 83 |
FR802R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 100V. Maximum average forward rectified current 8.0A. |
Bytes |
| 84 |
FR803R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 200V. Maximum average forward rectified current 8.0A. |
Bytes |
| 85 |
FR804R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 400V. Maximum average forward rectified current 8.0A. |
Bytes |
| 86 |
FR805R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 600V. Maximum average forward rectified current 8.0A. |
Bytes |
| 87 |
FR806R |
Fast recovery rectifier. Case negative. Maximum recurrent peak reverse voltage 800V. Maximum average forward rectified current 8.0A. |
Bytes |
| 88 |
GBL401 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
Panjit International Inc |
| 89 |
GBL402 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
Panjit International Inc |
| 90 |
GBL404 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC). |
Panjit International Inc |
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