| No. |
Part Name |
Description |
Manufacturer |
| 61 |
PSMN6R3-120ES |
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK |
Nexperia |
| 62 |
PSMN6R3-120ES |
N-channel 120 V 6.7 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 63 |
PSMN7R0-100ES |
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. |
Nexperia |
| 64 |
PSMN7R0-100ES |
N-channel 100V 6.8 mΩ standard level MOSFET in I2PAK. |
NXP Semiconductors |
| 65 |
PSMN7R8-120ES |
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK |
Nexperia |
| 66 |
PSMN7R8-120ES |
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 67 |
PSMN8R5-100ES |
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK |
Nexperia |
| 68 |
PSMN8R5-100ES |
N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 69 |
PSMN8R5-100ESF |
NextPower 100 V, 8.8 mΩ N-channel MOSFET in I2PAK package |
Nexperia |
| 70 |
PSMN8R5-108ES |
N-channel 108 V 8.5 mΩ standard level MOSFET in I2PAK |
NXP Semiconductors |
| 71 |
SAA1005-P |
Seven-stage frequency divider in I2L technology |
ITT Semiconductors |
| 72 |
SC50462 |
Infrared remote control transmitter for use in infrared applications |
Silan Semiconductors |
| 73 |
SC50462S |
Infrared remote control transmitter for use in infrared applications |
Silan Semiconductors |
| 74 |
SC50560 |
Infrared remote control transmitter for use in infrared applications |
Silan Semiconductors |
| 75 |
SC50560S |
Infrared remote control transmitter for use in infrared applications |
Silan Semiconductors |
| 76 |
SIEMENS-IC-SYMBOLS |
Alphabetical compilation of the symbols used in Integrierte-Halbeiterschaultungen-1970 Databook |
Siemens |
| 77 |
SL701B |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
| 78 |
SL701C |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
| 79 |
SL702B |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
| 80 |
SL702C |
Monolithic, bipolar integrated circuit intended primarily for use as operationa amplifiers or in intrumentation applications |
PLESSEY Semiconductors |
| 81 |
STD7NM80-1 |
N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 82 |
STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package |
ST Microelectronics |
| 83 |
STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
ST Microelectronics |
| 84 |
STE26N50 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
ST Microelectronics |
| 85 |
STE36N50 |
N Channel Enhancement Mode Power MOS Transistor in Isotop Package |
ST Microelectronics |
| 86 |
STE88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 88 A, MDmesh(TM) V Power MOSFET in ISOTOP package |
ST Microelectronics |
| 87 |
STFI10N60M2 |
N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 88 |
STFI10N62K3 |
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 89 |
STFI10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 90 |
STFI10NK60Z |
N-channel 600 V, 0.65 Ohm, 10 A, Zener-protected SuperMESH(TM) Power MOSFET in I2PAKFP package |
ST Microelectronics |
| | | |
