| No. |
Part Name |
Description |
Manufacturer |
| 61 |
40823 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for Mixers |
RCA Solid State |
| 62 |
40841 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor from DC to 500MHz |
RCA Solid State |
| 63 |
5058/6 |
Stand-off insulators with threaded terminals |
Vishay |
| 64 |
56-245 |
Spacer disc made of insulating material, for transistors with housing TO-5, TO-12, TO-33, TO-39 |
VALVO |
| 65 |
56-246 |
Spacer disc made of insulating material, for transistors with housing TO-18, TO-72 |
VALVO |
| 66 |
AC05DSMA |
5A resin insulating TRIAC |
NEC |
| 67 |
AC05FSMA |
5A resin insulating TRIAC |
NEC |
| 68 |
AC08DSMA |
8A resin insulating TRIAC |
NEC |
| 69 |
AC08FSMA |
8A resin insulating TRIAC |
NEC |
| 70 |
AC10DSMA |
10A resin insulated TRIAC |
NEC |
| 71 |
AC10FSMA |
10A resin insulated TRIAC |
NEC |
| 72 |
AC12DSMA |
10A resin insulating TRIAC |
NEC |
| 73 |
AC12FSMA |
12A resin insulating TRIAC |
NEC |
| 74 |
AC16DSMA |
16A resin insulating TRIAC |
NEC |
| 75 |
AC16FSMA |
16A resin insulating TRIAC |
NEC |
| 76 |
ACCESSORIES |
Mica discs, insulated bushings clamping plate, cooling clamps, mounting kit for transistors 56218, spacer washers 56245 56246 |
VALVO |
| 77 |
AN821 |
NEW LAYOUT INSULATION REQUIREMENT |
SGS Thomson Microelectronics |
| 78 |
AN856 |
TRIPLE GALVANIC INSULATED HIGH SIDE DRIVING WITH TD310 |
SGS Thomson Microelectronics |
| 79 |
B6B-PH-KL |
Disconnectable Insulation Displacement and Crimp Style Connectors |
JST |
| 80 |
BAS28 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 81 |
BAS28W |
Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
Siemens |
| 82 |
BAW100 |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
Siemens |
| 83 |
BAW101 |
Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
Siemens |
| 84 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 85 |
BCR10UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 86 |
BCR12KM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 87 |
BCR12PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 88 |
BCR12PM-14 |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 89 |
BCR12UM |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 90 |
BCR16A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE |
Mitsubishi Electric Corporation |
| | | |
