No. |
Part Name |
Description |
Manufacturer |
61 |
BSM50GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
62 |
BSM50GD120DN2E3226 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
63 |
BSM75GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
64 |
BSM75GB170DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
65 |
BSV81 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
66 |
BTA12 |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
67 |
BTA12-200B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
68 |
BTA12-50B |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
69 |
BTA12-600BS |
Thyristor TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube |
New Jersey Semiconductor |
70 |
C67070-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
71 |
C67070-A2120-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
72 |
C67070-A2300-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
73 |
C67070-A2301-A70 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
74 |
C67070-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate) |
Siemens |
75 |
C67070-A2701-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
76 |
C67070-A2702-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
77 |
C67070-A2703-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
78 |
C67070-A2704-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
79 |
C67076-A2009-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
80 |
C67076-A2010-A70 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
81 |
C67076-A2105-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
82 |
C67076-A2106-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
83 |
C67076-A2107-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
84 |
C67076-A2108-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
85 |
C67076-A2109-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
86 |
CM1000HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
87 |
CM1000HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
88 |
CM100BU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
89 |
CM100DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
90 |
CM100DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
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