No. |
Part Name |
Description |
Manufacturer |
61 |
2N4992 |
Planar monolithic silicon bilateral transistor. 1A. |
General Electric Solid State |
62 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
63 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
64 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
65 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
66 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
67 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
68 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
69 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
70 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
71 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
72 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
73 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
74 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
75 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
76 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
77 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
78 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
79 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
80 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
81 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
82 |
3D3215M-1.5 |
Delay 1.5 +/-0.7 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
83 |
3D3215M-10 |
Delay 10 +/-1.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
84 |
3D3215M-12 |
Delay 12 +/-1.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
85 |
3D3215M-15 |
Delay 15 +/-1.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
86 |
3D3215M-2 |
Delay 2 +/-0.8 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
87 |
3D3215M-2.5 |
Delay 2.5 +/-1 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
88 |
3D3215M-20 |
Delay 20 +/-2 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
89 |
3D3215M-25 |
Delay 25 +/-2.5 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
90 |
3D3215M-3 |
Delay 3 +/-1.3 ns, monolithic 5-TAP 3.3 V fixed delay line |
Data Delay Devices Inc |
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