No. |
Part Name |
Description |
Manufacturer |
61 |
BD140-6 |
PNP Silicon Transistor for AF driver and power stages of medium output |
Siemens |
62 |
BD9271KUT |
White LED Diver for Backlight of Medium/Large-sized LCDs |
ROHM |
63 |
BD9271KUT-GZE2 |
White LED Diver for Backlight of Medium/Large-sized LCDs |
ROHM |
64 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
65 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
66 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
67 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
68 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
69 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
70 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
71 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
72 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
73 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
74 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
75 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
76 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
77 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
78 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
79 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
80 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
81 |
BU606 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
82 |
BU607 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
83 |
BU608 |
Silicon epitaxial planar NPN transistor for use in horizontal deflection output stages of MTV receivers |
SGS-ATES |
84 |
DPM3 |
The DPM 3 is the largest in our sub-miniature series of meters but still uses the same miniaturisation techniques to produce a very compact instrument |
etc |
85 |
DPM3S |
The DPM 3 is the largest in our sub-miniature series of meters but still uses the same miniaturisation techniques to produce a very compact instrument |
etc |
86 |
EGS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
87 |
ESS/W/N |
Military/Established Reliability, MIL-R-39007 Qual., Type RWR, R Level, Meets Solvent Resistance of MIL-STD-202 (Method 215), 100% Power Stabilization and Screening Test |
Vishay |
88 |
GEN52 |
Germanium surface rectifier of medium power |
TUNGSRAM |
89 |
GEN53 |
Germanium surface rectifier of medium power |
TUNGSRAM |
90 |
GEN54 |
Germanium surface rectifier of medium power |
TUNGSRAM |
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