| No. |
Part Name |
Description |
Manufacturer |
| 61 |
FU-641SEA-1M3 |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR/ 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 62 |
FU-641SEA-1M4 |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR/ 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 63 |
FU-641SEA-1MX |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 64 |
FU-641SEA-1MX |
1.55 um EA MODULATOR INTEGRATED DFB-LD MODULE (7 PIN PACKAGE WITH K CONNECTOR, 10GB/s DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 65 |
G5851-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 66 |
G5851-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 67 |
G5851-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 68 |
G5851-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 69 |
G5851-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 70 |
G5851-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 71 |
G5852-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 72 |
G5852-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 73 |
G5852-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 74 |
G5852-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 75 |
G5852-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 76 |
G5852-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 77 |
G5853-103 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 78 |
G5853-11 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 79 |
G5853-13 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 80 |
G5853-203 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 81 |
G5853-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 82 |
G5853-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 83 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 84 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 85 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 86 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 87 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 88 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
| 89 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
| 90 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
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