| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1.5KE400C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 324.00 V. Test current IT = 1 mA. |
Bytes |
| 62 |
1.5KE400C |
Transient voltage suppressor. 1500 W. Breakdown voltage 360.0 V(min), 440.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 63 |
1.5KE400CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 342.00 V. Test current IT = 1 mA. |
Bytes |
| 64 |
1.5KE400CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 380.0 V(min), 420.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 65 |
1.5KE440C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 356.00 V. Test current IT = 1 mA. |
Bytes |
| 66 |
1.5KE440C |
Transient voltage suppressor. 1500 W. Breakdown voltage 396.0 V(min), 484.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 67 |
1.5KE440CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 376.00 V. Test current IT = 1 mA. |
Bytes |
| 68 |
1.5KE440CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 418.0 V(min), 462.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 69 |
16043A |
16043A 3-Terminal SMD Test Fixture |
Agilent (Hewlett-Packard) |
| 70 |
16043B |
16043B 3-Terminal SMD Test Fixture |
Agilent (Hewlett-Packard) |
| 71 |
16197A |
16197A Bottom Electrode SMD Test Fixture |
Agilent (Hewlett-Packard) |
| 72 |
1N4370 |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
Jinan Gude Electronic Device |
| 73 |
1N4370A |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 74 |
1N4370C |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 75 |
1N4370D |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 76 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 77 |
1N4371C |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 78 |
1N4371D |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 79 |
1N4372A |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 80 |
1N4372C |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 81 |
1N4372D |
500mW, silicon zener diode. Zener voltage 3.0 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 82 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 83 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 84 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 85 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 86 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 87 |
1N5520A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 88 |
1N5520B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 89 |
1N5521A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 90 |
1N5521B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| | | |
