| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SC3221 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
| 62 |
2SC3222 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
| 63 |
2SC3223 |
High Voltage Ultra High Speed Switching Transistors |
Shindengen |
| 64 |
2SC3437 |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 65 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 66 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 67 |
2SC4667 |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 68 |
2SC752(G)TM |
Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications |
TOSHIBA |
| 69 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
| 70 |
2SD1071 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER |
Fuji Electric |
| 71 |
2SD929 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR |
Unknow |
| 72 |
5962F9467602VPA |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier |
Intersil |
| 73 |
5962F9467602VPC |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier |
Intersil |
| 74 |
5962F9675601VPA |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier with Offset Adjust |
Intersil |
| 75 |
5962F9764101VEA |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 76 |
5962F9764101VEC |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 77 |
5962F9764101VXC |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 78 |
ADS1282-HT |
High Temperature Ultra High Resolution Delta Sigma ADC with PGA for Seismic and Energy Exploration 28-CDIP SB -55 to 210 |
Texas Instruments |
| 79 |
ADS1282HPW |
High Temperature Ultra High Resolution Delta Sigma ADC with PGA for Seismic and Energy Exploration 28-TSSOP -55 to 175 |
Texas Instruments |
| 80 |
ADS1282SJDJ |
High Temperature Ultra High Resolution Delta Sigma ADC with PGA for Seismic and Energy Exploration 28-CDIP SB -55 to 210 |
Texas Instruments |
| 81 |
ADS1282SKGDA |
High Temperature Ultra High Resolution Delta Sigma ADC with PGA for Seismic and Energy Exploration 0-XCEPT -55 to 210 |
Texas Instruments |
| 82 |
DLN4148 |
DIODE silicon epitaxial planar, ultra high speed switching applications |
TOSHIBA |
| 83 |
DLN4446 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 84 |
DLN4447 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 85 |
DLN4448 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 86 |
DLN4449 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 87 |
DLN914 |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 88 |
DLN914A |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 89 |
DLN914B |
Silicon epitaxial planar diode, ultra high speed switching applications |
TOSHIBA |
| 90 |
FTSO4208 |
PNP small signal ultra high speed saturated switch. |
Fairchild Semiconductor |
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