| No. |
Part Name |
Description |
Manufacturer |
| 61 |
APT50M50 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 62 |
APT50M80 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 63 |
APT6015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 64 |
APT6030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 65 |
APT8015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 66 |
APT8018 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 67 |
APT8030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 68 |
APT8065 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 69 |
APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 70 |
BC445 |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 71 |
BC445A |
V(ceo): 60V; V(cbo): 60V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 72 |
BC447 |
V(ceo): 80V; V(cbo): 80V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 73 |
BC447A |
V(ceo): 80V; V(cbo): 80V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 74 |
BC447B |
V(ceo): 80V; V(cbo): 80V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 75 |
BC449 |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 76 |
BC449A |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 77 |
BC449B |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 78 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 79 |
BD6111FV |
Regulator LSIs > Variable output voltage negative output regulator |
ROHM |
| 80 |
BF370R |
0.500W High Voltage NPN Plastic Leaded Transistor. 15V Vceo, 0.100A Ic, 40 hFE. |
Continental Device India Limited |
| 81 |
BF393 |
0.625W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 hFE. |
Continental Device India Limited |
| 82 |
BF420 |
0.800W High Voltage NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 83 |
BF422 |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 50 hFE. |
Continental Device India Limited |
| 84 |
BF422BPL |
0.900W High Voltage NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 85 |
BF720 |
Small Signal High Voltage NPN |
ON Semiconductor |
| 86 |
BF720T1 |
Small Signal High Voltage NPN |
ON Semiconductor |
| 87 |
BF720T3 |
Small Signal High Voltage NPN |
ON Semiconductor |
| 88 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 89 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 90 |
BTA40-600B |
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR |
SGS Thomson Microelectronics |
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