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Datasheets for X 1

Datasheets found :: 28160
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No. Part Name Description Manufacturer
61 41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
62 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
63 4X16E43V 4 MEG x 16 EDO DRAM etc
64 4X16E83V 4 MEG x 16 EDO DRAM etc
65 4X16E83VTW-6 4 MEG x 16 EDO DRAM etc
66 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
67 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
68 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
69 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
70 54S416T 1M x 4 Banks x 16 BITS SDRAM Ceramate
71 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
72 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
73 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
74 5962-9470401QXA 512 x 18 x 2 Synchronous Bidirectional FIFO Memory Texas Instruments
75 5962-9562701NXD 1024 x 18 Synchronous FIFO Memory Texas Instruments
76 5962-9650901QXA 512 x 18 x 2 bidirectional asynchronous FIFO memory Texas Instruments
77 5962R-0323501QUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
78 5962R-0323501QUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
79 5962R-0323501QUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
80 5962R-0323501VUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
81 5962R-0323501VUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
82 5962R-0323501VUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
83 5962R-0323502QUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
84 5962R-0323502QUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
85 5962R-0323502QUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
86 5962R-0323502VUA 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
87 5962R-0323502VUC 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology
88 5962R-0323502VUX 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). Aeroflex Circuit Technology
89 5962R-TBD01QTBDA 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). Aeroflex Circuit Technology
90 5962R-TBD01QTBDC 256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). Aeroflex Circuit Technology


Datasheets found :: 28160
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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