| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SC3660 |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM060C69-28 is also the datasheet of 2SC3660, see the Electrical Characteristics table) |
NEC |
| 62 |
2SC3660A |
Class AB/C UHF 28V push-pull transistor (This datasheet of NEM080C69-28 is also the datasheet of 2SC3660A, see the Electrical Characteristics table) |
NEC |
| 63 |
2SJ652 |
P-Channel Power MOSFET, -60V, -28A, 38mOhm, TO-220F-3SG |
ON Semiconductor |
| 64 |
3135GN-280LV |
GaN Transistors |
Microsemi |
| 65 |
42050-284 |
POSITIVE VOLTAGE REGULATORS |
Micropac Industries |
| 66 |
42050-288 |
28V DC; 10A; positive voltage regulator. For use in general purpose applications |
Micropac Industries |
| 67 |
42051-283 |
5 A FIXED THREE TERMINAL NEGATIVE VOLTAGE REGULATORS |
Micropac Industries |
| 68 |
4E100-28 |
Silicon four-layer diode |
ITT Industries |
| 69 |
4E100-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 70 |
4E100M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 71 |
4E20-28 |
Silicon four-layer diode |
ITT Industries |
| 72 |
4E20-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 73 |
4E200-28 |
Silicon four-layer diode |
ITT Industries |
| 74 |
4E200-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 75 |
4E200M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 76 |
4E20M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 77 |
4E30-28 |
Silicon four-layer diode |
ITT Industries |
| 78 |
4E30-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 79 |
4E30M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 80 |
4E40-28 |
Silicon four-layer diode |
ITT Industries |
| 81 |
4E40-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 82 |
4E40M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 83 |
4E50-28 |
Silicon four-layer diode |
ITT Industries |
| 84 |
4E50-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 85 |
4E50M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 86 |
4E80-28 |
4-LAYER DIODE THYRISTORS, Comercial Series |
ITT Semiconductors |
| 87 |
4E80M-28 |
4-LAYER DIODE THYRISTORS, Military Series |
ITT Semiconductors |
| 88 |
5082-2800 |
Schottky Barrier Diodes for General Purpose Applications |
Agilent (Hewlett-Packard) |
| 89 |
5082-2810 |
Schottky Barrier Diodes for General Purpose Applications |
Agilent (Hewlett-Packard) |
| 90 |
5082-2811 |
Schottky Barrier Diodes for General Purpose Applications |
Agilent (Hewlett-Packard) |
| | | |
