| No. |
Part Name |
Description |
Manufacturer |
| 61 |
DTB123TC |
-500mA/-40V Digital transistor (with built-in resistor) |
ROHM |
| 62 |
DTB123TCHZG |
-500mA/-40V Digital transistor (with built-in resistor) |
ROHM |
| 63 |
DTB123TCHZGT116 |
-500mA/-40V Digital transistor (with built-in resistor) |
ROHM |
| 64 |
DTB123TCT116 |
-500mA/-40V Digital transistor (with built-in resistor) |
ROHM |
| 65 |
ENA1597 |
P-Channel Power MOSFET -40V, -30A, 25mOhm, Single ATPAK |
ON Semiconductor |
| 66 |
ENA1603 |
P-Channel Power MOSFET, -40V, -50A, 17mOhm, Single ATPAK |
ON Semiconductor |
| 67 |
ENA1604 |
P-Channel Power MOSFET, -40V, -70A, 10.4mOhm, Single ATPAK |
ON Semiconductor |
| 68 |
ENA1892 |
Power MOSFET 40V, 3.5A, 85mOhm, -40V -2.5A, 163mOhm, Complementary Dual ECH8 |
ON Semiconductor |
| 69 |
FDD4141 |
-40V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 70 |
FDD4141_F085 |
-40V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 71 |
FDD4243 |
-40V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 72 |
FDD4685 |
-40V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 73 |
FDD4685_F085 |
P-Channel PowerTrench� MOSFET -40V, -32A, 35m? |
Fairchild Semiconductor |
| 74 |
FDD8424H_F085A |
Dual N & P-Channel PowerTrench� MOSFET N-Channel: 40V, 20A, 24m? P-Channel: -40V, -20A, 54m? |
Fairchild Semiconductor |
| 75 |
FDS4141 |
-40V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 76 |
FDS4141_F085 |
P-Channel PowerTrench� MOSFET -40V, -10.8A, 19.0m? |
Fairchild Semiconductor |
| 77 |
FDS4675_F085 |
-40V P-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 78 |
GES2906 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 79 |
GES2906A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 80 |
GES2907 |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 81 |
GES2907A |
Planar passivated epitaxial PNP silicon transistor. -40V, -350mA. |
General Electric Solid State |
| 82 |
GES5815 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
| 83 |
GES5817 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
| 84 |
GES5819 |
Planar passivated epitaxial PNP silicon transistor. -40V, -750mA. |
General Electric Solid State |
| 85 |
IRF5803 |
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 86 |
IRF5803D2 |
-40V FETKY - MOSFET and Schottky Diode in a SO-8 package |
International Rectifier |
| 87 |
IRF5803D2TR |
-40V FETKY - MOSFET and Schottky Diode in a SO-8 package |
International Rectifier |
| 88 |
IRF5803D2TRPBF |
-40V FETKY - MOSFET and Schottky Diode in a SO-8 package |
International Rectifier |
| 89 |
IRF5803TR |
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
| 90 |
IRF5803TRPBF |
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package |
International Rectifier |
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