No. |
Part Name |
Description |
Manufacturer |
61 |
2214-80A |
data delay devices |
Data Delay Devices Inc |
62 |
2214-80B |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
63 |
2214-80B |
data delay devices |
Data Delay Devices Inc |
64 |
2214-80C |
20-TAP DIP DELAY LINE TD/TR = 10 (SERIES 2214) |
Data Delay Devices Inc |
65 |
2214-80C |
data delay devices |
Data Delay Devices Inc |
66 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
67 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
68 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
69 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
70 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
71 |
2N6650 |
10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
72 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
73 |
2SA537A |
Silicon PNP Epitaxial Planar Transistor Vcbo=-90V, Vceo=--80V, intended for use in HiFi Amp. Driver, Power Output |
Hitachi Semiconductor |
74 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
75 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
76 |
2SAR514P5 |
PNP -80V -0.7A Medium Power Transistor |
ROHM |
77 |
2SAR514P5T100 |
PNP -80V -0.7A Medium Power Transistor |
ROHM |
78 |
2SAR544P5 |
PNP -80V -2.5A Medium Power Transistor |
ROHM |
79 |
2SAR544P5T100 |
PNP -80V -2.5A Medium Power Transistor |
ROHM |
80 |
2SAR586D |
PNP -80V -5.0A Medium Power Transistor |
ROHM |
81 |
2SAR586DGTL |
PNP -80V -5.0A Medium Power Transistor |
ROHM |
82 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
83 |
2SB1198 |
Low-frequency Transistor(-80V/ -0.5A) |
ROHM |
84 |
2SB1342 |
Power Transistor (-80V/ -4A) |
ROHM |
85 |
2SB889F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
86 |
2SD1200F |
MEDIUM POWER TRANSISTOR(-80V, -0.7A) |
Unknow |
87 |
2SD1933 |
Power Transistor (-80V/ -4A) |
ROHM |
88 |
3D7010-80 |
Delay 8 +/-1.5 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
89 |
3D7010G-80 |
Delay 8 +/-1.5 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
90 |
3D7010S-80 |
Delay 8 +/-1.5 ns, monolithic 10-TAP fixed delay line |
Data Delay Devices Inc |
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