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Datasheets for -BAS

Datasheets found :: 4903
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No. Part Name Description Manufacturer
61 2N5191 Epitaxial-base transistor for linear and switching applications SGS-ATES
62 2N5192 Silicon epitaxial-base NPN medium power transistor SGS-ATES
63 2N5192 Epitaxial-base transistor for linear and switching applications SGS-ATES
64 2N5193 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
65 2N5193 Epitaxial-base transistor for linear and switching applications SGS-ATES
66 2N5194 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
67 2N5194 Epitaxial-base transistor for linear and switching applications SGS-ATES
68 2N5195 Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package SGS-ATES
69 2N5195 Epitaxial-base transistor for linear and switching applications SGS-ATES
70 2N5210 Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
71 2N5400 Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
72 2N5401 Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
73 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
74 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
75 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
76 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
77 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
78 2N5781 Silicon P-N-P epitaxial-base transistor. -80V, 10W. General Electric Solid State
79 2N5782 Silicon P-N-P epitaxial-base transistor. -65V, 10W. General Electric Solid State
80 2N5783 Silicon P-N-P epitaxial-base transistor. -45V, 10W. General Electric Solid State
81 2N5784 Silicon N-P-N epitaxial-base transistor. 80V, 10W. General Electric Solid State
82 2N5785 Silicon N-P-N epitaxial-base transistor. 65V, 10W. General Electric Solid State
83 2N5786 Silicon N-P-N epitaxial-base transistor. 45V, 10W. General Electric Solid State
84 2N5875 Silicon epitaxial-base PNP power transistor SGS-ATES
85 2N5875 Epitaxial-base transistor for linear and switching applications SGS-ATES
86 2N5876 Silicon epitaxial-base PNP power transistor SGS-ATES
87 2N5876 Epitaxial-base transistor for linear and switching applications SGS-ATES
88 2N5877 Silicon epitaxial-base NPN power transistor SGS-ATES
89 2N5877 Epitaxial-base transistor for linear and switching applications SGS-ATES
90 2N5878 Silicon epitaxial-base NPN power transistor SGS-ATES


Datasheets found :: 4903
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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