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Datasheets for -EMI

Datasheets found :: 622
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No. Part Name Description Manufacturer
61 AN-555 Application Note - Mounting stripline-opposed-emiter (SOE) transistors Motorola
62 BC107A NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
63 BC107B NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
64 BC108A NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
65 BC108B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
66 BC108C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
67 BC109B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
68 BC109C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
69 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
70 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
71 BC239 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
72 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
73 BC308 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
74 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
75 BC327 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
76 BC327 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. USHA India LTD
77 BC327-16 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
78 BC327-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
79 BC327-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
80 BC328 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
81 BC328-16 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
82 BC328-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
83 BC328-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
84 BC337 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
85 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
86 BC337-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
87 BC337-25 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
88 BC337-40 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
89 BC338 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
90 BC338-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens


Datasheets found :: 622
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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