| No. |
Part Name |
Description |
Manufacturer |
| 61 |
NJL5198K-F10 |
GENERAL PURPOSE PHOTO REFLECTOR�� |
New Japan Radio |
| 62 |
NJL5199K-F10 |
GENERAL PURPOSE PHOTO REFLECTOR�� |
New Japan Radio |
| 63 |
NUCLEO-F103RB |
STM32 Nucleo development board for STM32 F1 series - with STM32F103RBT6 MCU,supports Arduino |
ST Microelectronics |
| 64 |
Q62702-F102 |
NPN Silicon RF Transistor (Especially suitable for TV-sat and UHF tuners) |
Siemens |
| 65 |
Q62702-F1020 |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
| 66 |
Q62702-F1021 |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
| 67 |
Q62702-F1024 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 68 |
Q62702-F1042 |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
Siemens |
| 69 |
Q62702-F1049 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
| 70 |
Q62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 71 |
Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 72 |
Q62702-F1052 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 73 |
Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 74 |
Q62702-F1055 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 75 |
Q62702-F1056 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 76 |
Q62702-F1057 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 77 |
Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 78 |
Q62702-F1059 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 79 |
Q62702-F1062 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 80 |
Q62702-F1063 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 81 |
Q62702-F1064 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 82 |
Q62702-F1065 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 83 |
Q62702-F1066 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 84 |
Q62702-F1086 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
Siemens |
| 85 |
Q62702-F1088 |
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and) |
Siemens |
| 86 |
Q62702-F109 |
NPN Silicon Planar Transistors |
Siemens |
| 87 |
Q62703-F106 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 88 |
Q62703-F107 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 89 |
Q62703-F108 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 90 |
R4430PC-F10-MCM |
RISC microprocessor multichip module. |
Aeroflex Circuit Technology |
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