No. |
Part Name |
Description |
Manufacturer |
61 |
K4S280832F-UC75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
62 |
K4S281632F-UC60 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
63 |
K4S281632F-UC60/75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
64 |
K4S281632F-UC75 |
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
65 |
K4S510432B-UC |
512Mb B-die SDRAM Specification |
Samsung Electronic |
66 |
K4S510432B-UC75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
67 |
K4S510832B-UC75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
68 |
K4S511632B-UC75 |
512Mb B-die SDRAM Specification |
Samsung Electronic |
69 |
K4S560432E-UC |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
70 |
K4S560432E-UC75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
71 |
K4S560832E-UC75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
72 |
K4S561632E-UC60 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
73 |
K4S561632E-UC75 |
256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
Samsung Electronic |
74 |
K6R1008C1D-UC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
75 |
K6R1008V1D-UC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
76 |
K6R1008V1D-UC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
77 |
K6R1016C1D-UC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
78 |
K6R1016V1D-UC08 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
79 |
K6R1016V1D-UC10 |
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
Samsung Electronic |
80 |
K6R4008C1D-UC10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
81 |
K6R4008V1D-UC08 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
82 |
K6R4008V1D-UC10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
83 |
K6R4016C1D-UC10 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
84 |
K6R4016C1D-UC8 |
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. |
Samsung Electronic |
85 |
PM9311-UC |
ENHANCED TT1�� SWITCH FABRIC |
PMC-Sierra Inc |
86 |
PM9312-UC |
ENHANCED TT1�� SWITCH FABRIC |
PMC-Sierra Inc |
87 |
SN74AVC4T234ZSUR |
4-Bit Dual-Supply Bus Transceiver With Config Voltage Translation 11-uCSP -40 to 85 |
Texas Instruments |
88 |
TCA7408ZSZR |
Low-voltage 8-bit I2C I/O Expander with Interrupt Output Reset I/O Direction Registers 16-uCSP -40 to 85 |
Texas Instruments |
89 |
THS7319IZSVR |
3-Channel Very Low Power, Low Profile EDTV Video Amplifiers with 6-dB Gain 9-uCSP -40 to 85 |
Texas Instruments |
90 |
THS7319IZSVT |
3-Channel Very Low Power, Low Profile EDTV Video Amplifiers with 6-dB Gain 9-uCSP -40 to 85 |
Texas Instruments |
| | | |