| No. |
Part Name |
Description |
Manufacturer |
| 61 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 62 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 63 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 64 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 65 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 66 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 67 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 68 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 69 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 70 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 71 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 72 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 73 |
B360_A_B |
60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 74 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 75 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 76 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 77 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 78 |
BU323 |
10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 79 |
BU323A |
10 A N-P-N monollithic darlington power transistor. 400 V. 175 W. Gain of 150 at 6 A. |
General Electric Solid State |
| 80 |
BU808 |
SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS |
Jinan Gude Electronic Device |
| 81 |
CHR0100A-SJ |
5.8 GHz I/Q mixer. GaAs monolithic microwave IC. |
United Monolithic Semiconductors |
| 82 |
E2580 |
10 Gbits/s EML module. GPO connector RF input. |
Agere Systems |
| 83 |
F1A1G |
1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Jinan Gude Electronic Device |
| 84 |
F1A2G |
1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Jinan Gude Electronic Device |
| 85 |
F1A3G |
1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Jinan Gude Electronic Device |
| 86 |
F1A4G |
1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Jinan Gude Electronic Device |
| 87 |
F1A5G |
1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Jinan Gude Electronic Device |
| 88 |
F1A6G |
1.0 AMP. GLASS PASSIVATED FAST RECOVERY RECTIFIERS |
Jinan Gude Electronic Device |
| 89 |
FB1000 |
10 Amp. Glass Passivated Bridge Rectifier |
Fagor |
| 90 |
FB1000L |
10 Amp. Glass Passivated Bridge Rectifier |
Fagor |
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