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Datasheets for 0 A

Datasheets found :: 1219
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 1N6515 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
62 1N6517 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
63 1N6519 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
64 1N6616 3.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
65 1N6617 3.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
66 1N6618 3.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
67 1N6619 3.0 A Forward Current 70 ns Recovery Time Voltage Multipliers
68 1N6672 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
69 1N6672JAN 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
70 1N6672JANTX 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
71 1N6672JANTXV 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
72 1N6673 30 A 400V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
73 1N6674 30 A 500V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
74 1W010 Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. Jinan Gude Electronic Device
75 2N5007 100 V, 10 A high speed PNP transistor Solid State Devices Inc
76 2N5009 100 V, 10 A high speed PNP transistor Solid State Devices Inc
77 2N5330 150 V, 30 A high speed NPN transistor Solid State Devices Inc
78 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
79 2N6188 100 V, 10 A high speed PNP transistor Solid State Devices Inc
80 2N6189 100 V, 10 A high speed PNP transistor Solid State Devices Inc
81 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
82 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
83 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
84 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
85 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
86 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
87 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
88 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
89 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
90 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State


Datasheets found :: 1219
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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