No. |
Part Name |
Description |
Manufacturer |
61 |
1N6515 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
62 |
1N6517 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
63 |
1N6519 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
64 |
1N6616 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
65 |
1N6617 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
66 |
1N6618 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
67 |
1N6619 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
68 |
1N6672 |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
69 |
1N6672JAN |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
70 |
1N6672JANTX |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
71 |
1N6672JANTXV |
30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
72 |
1N6673 |
30 A 400V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
73 |
1N6674 |
30 A 500V COMMON CATHODE DUAL ULTRAFAST RECTIFIER |
Microsemi |
74 |
1W010 |
Single phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V. |
Jinan Gude Electronic Device |
75 |
2N5007 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
76 |
2N5009 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
77 |
2N5330 |
150 V, 30 A high speed NPN transistor |
Solid State Devices Inc |
78 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
79 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
80 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
81 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
82 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
83 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
84 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
85 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
86 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
87 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
88 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
89 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
90 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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