DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 0-96

Datasheets found :: 90
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
61 PA1162 800-960 MHz, 4 Watt, ultra linear power amplifier MA-Com
62 PA1162 800-960 MHz(4 Watt Ultra Linear Power Amplifier) Tyco Electronics
63 PA1186 800-960 MHz, 28 V GaAs linear power amplifier MA-Com
64 PA1186 800-960 MHz. 6 Watt 28v. GaAs Ultra Linear Power Amplifier Tyco Electronics
65 PCN10-96P-2.54DS Product Compliant to DIN41612/IEC603-2 Standard Hirose Electric
66 PH0810-15 850-960 MHz, 15 W, wireless power transistor MA-Com
67 PH0810-35 850-960 MHz, 35 W, wireless power transistor MA-Com
68 PTF080101 LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon
69 PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ Infineon
70 PTF080601 LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Infineon
71 PTF080601A LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Infineon
72 PTF080601E LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Infineon
73 PTF080601F LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz Infineon
74 PTF10138 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
75 PTF10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
76 PTF10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Ericsson Microelectronics
77 SD1398 850-960 MHz APPLICATIONS RF & MICROWAVE TRANSISTORS SGS Thomson Microelectronics
78 SD1398 850-960 MHZ APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
79 SD1400-03 24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range SGS Thomson Microelectronics
80 SD1420-01 860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications SGS Thomson Microelectronics
81 SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS SGS Thomson Microelectronics
82 SD1423 800-960MHZ BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS ST Microelectronics
83 SD1425 800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation SGS Thomson Microelectronics
84 SD1426 24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz SGS Thomson Microelectronics
85 SD1495-03 24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz SGS Thomson Microelectronics
86 SD1496-03 24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz SGS Thomson Microelectronics
87 SD4590 RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION SGS Thomson Microelectronics
88 SD4590 800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS ST Microelectronics
89 SKY73120 890-960 MHz Voltage Controlled Oscillator Skyworks Solutions
90 SKY73120-11 890-960 MHz Voltage Controlled Oscillator Skyworks Solutions


Datasheets found :: 90
Page: | 1 | 2 | 3 |



© 2024 - www Datasheet Catalog com