No. |
Part Name |
Description |
Manufacturer |
61 |
PA1162 |
800-960 MHz, 4 Watt, ultra linear power amplifier |
MA-Com |
62 |
PA1162 |
800-960 MHz(4 Watt Ultra Linear Power Amplifier) |
Tyco Electronics |
63 |
PA1186 |
800-960 MHz, 28 V GaAs linear power amplifier |
MA-Com |
64 |
PA1186 |
800-960 MHz. 6 Watt 28v. GaAs Ultra Linear Power Amplifier |
Tyco Electronics |
65 |
PCN10-96P-2.54DS |
Product Compliant to DIN41612/IEC603-2 Standard |
Hirose Electric |
66 |
PH0810-15 |
850-960 MHz, 15 W, wireless power transistor |
MA-Com |
67 |
PH0810-35 |
850-960 MHz, 35 W, wireless power transistor |
MA-Com |
68 |
PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
69 |
PTF080101S |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
70 |
PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
71 |
PTF080601A |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
72 |
PTF080601E |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
73 |
PTF080601F |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
74 |
PTF10138 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
75 |
PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
76 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
77 |
SD1398 |
850-960 MHz APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
78 |
SD1398 |
850-960 MHZ APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
79 |
SD1400-03 |
24V 14W Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 900-960MHz frequency range |
SGS Thomson Microelectronics |
80 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
81 |
SD1423 |
RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS |
SGS Thomson Microelectronics |
82 |
SD1423 |
800-960MHZ BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS |
ST Microelectronics |
83 |
SD1425 |
800-960MHz 30W 24V gold metallized NPN RF transistor, high linearity Class AB operation |
SGS Thomson Microelectronics |
84 |
SD1426 |
24V 60W epitaxial silicon NPN planar transistor designed for common base amplifier applications in the 800-960MHz |
SGS Thomson Microelectronics |
85 |
SD1495-03 |
24V 30W Class C epitaxial silicon NPN transistor designed for amplifier applications in the 900-960MHz |
SGS Thomson Microelectronics |
86 |
SD1496-03 |
24V 55W Class C epitaxial silicon NPN planar transistor 900-960MHz |
SGS Thomson Microelectronics |
87 |
SD4590 |
RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION |
SGS Thomson Microelectronics |
88 |
SD4590 |
800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS |
ST Microelectronics |
89 |
SKY73120 |
890-960 MHz Voltage Controlled Oscillator |
Skyworks Solutions |
90 |
SKY73120-11 |
890-960 MHz Voltage Controlled Oscillator |
Skyworks Solutions |
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