No. |
Part Name |
Description |
Manufacturer |
61 |
CM300DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
62 |
CM300DU-24F |
Trench Gate Design Dual IGBTMOD�� 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
63 |
CM300DU-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
64 |
CM300DU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
65 |
CM300DU-24H |
Dual IGBTMOD 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
66 |
CM300DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
67 |
CM300DU-34KA |
Dual IGBTMOD 300 Amperes/1700 Volts |
Powerex Power Semiconductors |
68 |
CM400DU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
69 |
CM400DU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
70 |
CM400DU-12F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
71 |
CM400DU-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
72 |
CM400DU-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
73 |
CM400DU-12H |
Dual IGBTMOD 400 Amperes/600 Volts |
Powerex Power Semiconductors |
74 |
CM400DU-12NFH |
High Frequency Dual IGBTMOD�� 400 Amperes/600 Volts |
Powerex Power Semiconductors |
75 |
CM400DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
76 |
CM400DU-24F |
Dual IGBTMOD 400 Amperes/1200 Volts |
Powerex Power Semiconductors |
77 |
CM400DU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
78 |
CM400DU-34KA |
Dual IGBTMOD 400 Amperes/1700 Volts |
Powerex Power Semiconductors |
79 |
CM400DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
80 |
CM400DU-5F |
Trench Gate Design Dual IGBTMOD�� 400 Amperes/250 Volts |
Powerex Power Semiconductors |
81 |
CM600DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
82 |
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
83 |
CM600DU-24NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
84 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
85 |
CM600DU-5F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
86 |
CM800DU-12H |
Dual IGBTMOD 800 Amperes/600 Volts |
Powerex Power Semiconductors |
87 |
CM900DU-24NF |
Mega Power Dual�� IGBTMOD 900 Amperes/1200 Volts |
Powerex Power Semiconductors |
88 |
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Mitsubishi Electric Corporation |
89 |
FD2000DU-120 |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE |
Powerex Power Semiconductors |
90 |
IDT79R4640100DU |
LOW-COST EMBEDDED ORION RISC MICROPROCESSOR |
IDT |
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