| No. |
Part Name |
Description |
Manufacturer |
| 61 |
QM300DY-24 |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 62 |
QM300DY-24B |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 63 |
QM300DY-2H |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 64 |
QM300DY-2HB |
TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 65 |
RM400DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 66 |
RM400DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 67 |
RM600DY-66S |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 68 |
RM600DY-66S |
HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 69 |
SI4300DY |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky |
Vishay |
| 70 |
SI4500DY |
Complementary MOSFET Half-Bridge (N- and P-Channel) |
Vishay |
| 71 |
SI4700DY |
Power Selector Switch |
Vishay |
| 72 |
SI4800DY |
N-Channel 30-V (D-S) MOSFET |
Vishay |
| 73 |
SI9400DY |
20-V (D-S) Single |
Vishay |
| | | |
