No. |
Part Name |
Description |
Manufacturer |
61 |
ISPLSI2128E-100LT176 |
In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
62 |
ISPLSI2128VE-100LT100 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
63 |
ISPLSI2128VE-100LT176 |
3.3V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
64 |
ISPLSI2128VL-100LT100 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
65 |
ISPLSI2128VL-100LT176 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
66 |
ISPLSI2192VE-100LT128 |
100 MHz 3.3V in-system prommable superFAST high density PLD |
Lattice Semiconductor |
67 |
ISPLSI2192VL-100LT128 |
2.5V In-System Programmable SuperFAST High Density PLD |
Lattice Semiconductor |
68 |
ISPLSI5128VE-100LT128 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
69 |
ISPLSI5128VE-100LT128I |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
70 |
ISPLSI5256VE-100LT100 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
71 |
ISPLSI5256VE-100LT100I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
72 |
ISPLSI5256VE-100LT128 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
73 |
ISPLSI5256VE-100LT128I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
74 |
ISPLSI5256VE-100LT256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
75 |
ISPLSI5256VE-100LT256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
76 |
ISPLSI5256VE-100LT272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
77 |
ISPLSI5256VE-100LT272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
78 |
KM684000LT |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
79 |
KM684000LT-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
80 |
KM684000LT-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
81 |
KM684000LT-5 |
512Kx8 bit CMOS static RAM, 55ns |
Samsung Electronic |
82 |
KM684000LT-5L |
512Kx8 bit CMOS static RAM, 55ns, low power |
Samsung Electronic |
83 |
KM684000LT-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
84 |
KM684000LT-7L |
512Kx8 bit CMOS static RAM, 70ns, low power |
Samsung Electronic |
85 |
KM684000LT-8 |
512Kx8 bit CMOS static RAM, 85ns |
Samsung Electronic |
86 |
KM684000LT-8L |
512Kx8 bit CMOS static RAM, 85ns, low power |
Samsung Electronic |
87 |
KM684000LT-L |
512Kx8 BIT HIGH HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
88 |
KM684000LTI-10 |
512Kx8 bit CMOS static RAM, 100ns |
Samsung Electronic |
89 |
KM684000LTI-10L |
512Kx8 bit CMOS static RAM, 100ns, low power |
Samsung Electronic |
90 |
KM684000LTI-7 |
512Kx8 bit CMOS static RAM, 70ns |
Samsung Electronic |
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