| No. |
Part Name |
Description |
Manufacturer |
| 61 |
DS1100LZ-60 |
3.3V 5-tap economy timing element (delay line), 60ns |
Dallas Semiconductor |
| 62 |
DS1100LZ-60 |
3.3V 5-Tap Economy Timing Element Delay Line |
MAXIM - Dallas Semiconductor |
| 63 |
DS1100LZ-60+ |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 64 |
DS1100LZ-60+T |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 65 |
DS1100LZ-75 |
3.3V 5-tap economy timing element (delay line), 75ns |
Dallas Semiconductor |
| 66 |
DS1100LZ-75 |
3.3V 5-Tap Economy Timing Element Delay Line |
MAXIM - Dallas Semiconductor |
| 67 |
DS1100LZ-75+ |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 68 |
DS1100LZ-75+T |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 69 |
DS1100LZ-75+W |
3-Volt 5-Tap Economy Timing Element (Delay Line) |
MAXIM - Dallas Semiconductor |
| 70 |
HM514800LZP-10 |
100ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 71 |
HM514800LZP-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 72 |
HM514800LZP-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| | | |
