No. |
Part Name |
Description |
Manufacturer |
61 |
KM416S4030CT-G |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
62 |
KM416S4030CT-G7 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 143MHz |
Samsung Electronic |
63 |
KM416S4030CT-G8 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz |
Samsung Electronic |
64 |
KM416S4030CT-GH |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
65 |
KM416S4030CT-GL |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
66 |
KM416S4030CT-L10 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 100MHz |
Samsung Electronic |
67 |
KM432S2030C |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
68 |
KM432S2030CT-F10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
69 |
KM432S2030CT-F6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
70 |
KM432S2030CT-F7 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
71 |
KM432S2030CT-F8 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
72 |
KM432S2030CT-G10 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
73 |
KM432S2030CT-G6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
74 |
KM432S2030CT-G7 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
75 |
KM432S2030CT-G8 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
76 |
KM44S16030CT-G_F10 |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
77 |
KM44S16030CT-G_F7 |
143MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
78 |
KM44S16030CT-G_F8 |
125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
79 |
KM44S16030CT-G_FH |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
80 |
KM44S16030CT-G_FL |
100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM |
Samsung Electronic |
81 |
KM48S8030C |
2M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
82 |
KM48S8030CT-G/FA |
2M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
83 |
KM48S8030CT-G_F10 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
84 |
KM48S8030CT-G_F7 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz |
Samsung Electronic |
85 |
KM48S8030CT-G_F8 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz |
Samsung Electronic |
86 |
KM48S8030CT-G_FH |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
87 |
KM48S8030CT-G_FL |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz |
Samsung Electronic |
88 |
LET20030C |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
SGS Thomson Microelectronics |
89 |
LET20030C |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
ST Microelectronics |
90 |
LET21030C |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY |
SGS Thomson Microelectronics |
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