| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BF904AR |
N-channel dual gate MOS-FETs |
Philips |
| 62 |
CXD1804AR |
CD-ROM Decoder |
SONY |
| 63 |
HD151TS304ARP |
ASSP>ICs for LBP/PPC>Spread Spectrum Clock Generators for Printers |
Renesas |
| 64 |
HS-5104ARH |
Op Amp, Quad 8MHz, Low Noise, Slew Rate 2V/�s, Rad-Hard |
Intersil |
| 65 |
HS-5104ARH |
Op Amp, Quad 8MHz, Low Noise, Slew Rate 2V/�s, Rad-Hard |
Intersil |
| 66 |
HS-5104ARH-T |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 67 |
HS0-5104ARH-Q |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 68 |
HS1-5104ARH |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 69 |
HS1-5104ARH-Q |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 70 |
HS1-5104ARH-T |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 71 |
HS9-5104ARH |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 72 |
HS9-5104ARH-Q |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 73 |
HS9-5104ARH-T |
Radiation Hardened Low Noise Quad Operational Amplifier |
Intersil |
| 74 |
JAN1N1204AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 75 |
JANTX1N1204AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 76 |
JANTXV1N1204AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
| 77 |
KM416V1004AR-6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 78 |
KM416V1004AR-7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 79 |
KM416V1004AR-8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
| 80 |
KM416V1004AR-F6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 81 |
KM416V1004AR-F7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 82 |
KM416V1004AR-F8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
| 83 |
KM416V1004AR-L6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
| 84 |
KM416V1004AR-L7 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 70ns |
Samsung Electronic |
| 85 |
KM416V1004AR-L8 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 80ns |
Samsung Electronic |
| 86 |
SN74LV04ARGYR |
Hex Inverters |
Texas Instruments |
| 87 |
SN74LV04ARGYR |
Hex Inverters |
Texas Instruments |
| 88 |
SN74LVC04ARGYR |
Hex Inverter |
Texas Instruments |
| 89 |
SN74LVC04ARGYR |
Hex Inverter |
Texas Instruments |
| 90 |
SN74LVC04ARGYRG4 |
Hex Inverter 14-VQFN -40 to 125 |
Texas Instruments |
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