| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SB0819 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 62 |
2SC2850K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081090 series is also the datasheet of 2SC2850K, see the Electrical Characteristics table) |
NEC |
| 63 |
2SC2850M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081091 series is also the datasheet of 2SC2850M, see the Electrical Characteristics table) |
NEC |
| 64 |
2SC3282A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM082081B-12 is also the datasheet of 2SC3282A, see the Electrical Characteristics table) |
NEC |
| 65 |
2SC3283A |
Class C, 800-960MHz 12V power transistor (This datasheet of NEM084081B-12 is also the datasheet of 2SC3283A, see the Electrical Characteristics table) |
NEC |
| 66 |
2SC3537 |
Class C, 900MHz 28V power transistor (This datasheet of NEM092081B-28 is also the datasheet of 2SC3537, see the Electrical Characteristics table) |
NEC |
| 67 |
2SC3538 |
Class C, 900MHz 28V power transistor (This datasheet of NEM094081B-28 is also the datasheet of 2SC3538, see the Electrical Characteristics table) |
NEC |
| 68 |
2SC3539 |
Class C, 900MHz 28V power transistor (This datasheet of NEM096081B-28 is also the datasheet of 2SC3539, see the Electrical Characteristics table) |
NEC |
| 69 |
2SC3542 |
Class A, 1.3 GHz 12V power transistor (This datasheet of NEL132081-12 is also the datasheet of 2SC3542, see the Electrical Characteristics table) |
NEC |
| 70 |
2SC4081 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W) |
ROHM |
| 71 |
2SC4081-A |
SOT-323 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 72 |
2SC4081-B |
SOT-323 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 73 |
2SC4081-C |
SOT-323 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 74 |
2SC4081FRA |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 75 |
2SC4081FRAT106 |
NPN General Purpose Amplification Transistor (Corresponds to AEC-Q101) |
ROHM |
| 76 |
2SC4081RT1 |
General Purpose Amplifier Transistor |
ON Semiconductor |
| 77 |
2SC4081T106 |
NPN General Purpose Amplification Transistor |
ROHM |
| 78 |
2SC4081UB |
NPN General Purpose Amplification Transistor |
ROHM |
| 79 |
2SC4081UBHZG |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 80 |
2SC4081UBHZGTL |
50V, 150mA, General purpose small signal amplifier (Corresponds to AEC-Q101) |
ROHM |
| 81 |
2SC4081UBTL |
NPN General Purpose Amplification Transistor |
ROHM |
| 82 |
2SC5081 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 83 |
2SC5081 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 84 |
2SC5081 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 85 |
2SD0814 |
Silicon NPN epitaxial planer type(For high breakdown voltage low-frequency and low-noise amplification) |
Panasonic |
| 86 |
2SD0814A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 87 |
2SD2081 |
Silicon NPN Transistor |
Sanken |
| 88 |
2SK0818 |
Silicon N-channel Power F-MOS FET |
Panasonic |
| 89 |
2SK0818A |
Silicon N-channel Power F-MOS FET |
Panasonic |
| 90 |
2SK1081-01 |
N-CHANNEL SILICON POWER MOS-FET |
Fuji Electric |
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