No. |
Part Name |
Description |
Manufacturer |
61 |
SBR60A200CT |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
62 |
SBR60A200CT-G |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
63 |
SBR60A200CTB |
Super Barrier Rectifier (TM) |
Diodes |
64 |
SBR60A200CTF |
Super Barrier Rectifier (TM) |
Diodes |
65 |
SBR60A200CTI |
Super Barrier Rectifier (TM) |
Diodes |
66 |
SBR60A20CT |
60A SBR� Super Barrier Rectifier |
Diodes |
67 |
SBR60A20CTB |
Super Barrier Rectifier (TM) |
Diodes |
68 |
SBR60A20CTF |
Super Barrier Rectifier (TM) |
Diodes |
69 |
SBR60A20CTI |
Super Barrier Rectifier (TM) |
Diodes |
70 |
SDB10A20 |
Rectifier Diode > Schottky Barrier Diode(Over 500mA) |
AUK Corp |
71 |
T10A200 |
Glass passivated junction |
Littelfuse |
72 |
T10A200B |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Bulk (500pcs). |
Littelfuse |
73 |
T10A200T |
T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 180V,max. Ir = 50uA @ Vr = 200V,max, Tape and reeled (1500pcs). |
Littelfuse |
74 |
TK20A20D |
Power MOSFET (N-ch 150V<VDSS≤250V) |
TOSHIBA |
75 |
TMPN3120A20 |
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
76 |
TMPN3120A20M |
Neuron � Chip For Distributed Intelligent Control Networks (LONWORKS � ) |
TOSHIBA |
77 |
TMPN3120A20U |
Neuron � Chip For Distributed Intelligent Control Networks (LONWORKS � ) |
TOSHIBA |
78 |
U10A20 |
FAST RECTIFIERS(10A,50-200V) |
MOSPEC Semiconductor |
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