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Datasheets for 0CJ

Datasheets found :: 170
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
61 GM71CS17800CJ-5 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 50ns Hynix Semiconductor
62 GM71CS17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
63 GM71CS17800CJ-7 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 70ns Hynix Semiconductor
64 HM514260CJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
65 HM514260CJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
66 HM514260CJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
67 HM514260CJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
68 HM514800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
69 HM514800CJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
70 HM514800CJ-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
71 HM514800CJI-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
72 HM514800CJI-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
73 HM51S4260CJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
74 HM51S4260CJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
75 HM51S4260CJ-7 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
76 HM51S4260CJ-8 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
77 HM51S4800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
78 HM51S4800CJ-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
79 HM51S4800CJ-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
80 HM51S4800CJI-7 70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
81 HM51S4800CJI-8 80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
82 IDT49C460CJ 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT IDT
83 IDT49C460CJB 32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT IDT
84 IH5040CJE General-Purpose CMOS Analog Switches MAXIM - Dallas Semiconductor
85 IH5050CJE CMOS Analog switches MAXIM - Dallas Semiconductor
86 IH5140CJE High-Level CMOS Analog Switches Intersil
87 IH5140CJE Low Power Fast CMOS Analog Switches MAXIM - Dallas Semiconductor
88 IP5560CJ Switched mode power supply control circuit SemeLAB
89 KM416C1000CJ-5 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
90 KM416C1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic


Datasheets found :: 170
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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