No. |
Part Name |
Description |
Manufacturer |
61 |
MG30Q2YL1 |
TRANSISTOR MODULES |
etc |
62 |
MG400Q2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
63 |
MG50Q2YK1 |
TRANSISTOR MODULES |
etc |
64 |
MG50Q2YL1 |
TRANSISTOR MODULES |
etc |
65 |
MG50Q2YS40 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
66 |
MG50Q2YS50 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
67 |
MG50Q2YS50A |
N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
TOSHIBA |
68 |
MG600Q2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
69 |
MIG100Q201H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
70 |
MIG150Q201H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
71 |
MIG200Q2CSB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
72 |
MIG300Q2CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
73 |
MIG400Q2CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
74 |
MIG50Q201H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
75 |
NM27C040Q200 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
76 |
NMC27C010Q20 |
200 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
77 |
NMC27C010Q200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
78 |
NMC27C010Q25 |
250 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
79 |
NMC27C010Q250 |
250 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
80 |
OM100Q20CB |
200V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package |
International Rectifier |
81 |
R1140Q201B-TL |
120mA LDO regulator IC. Output voltage 2.0V. Mask option without auto discharge function at OFF state. Taping type TL. |
Ricoh |
82 |
R1140Q201B-TR |
120mA LDO regulator IC. Output voltage 2.0V. Mask option without auto discharge function at OFF state. Standard taping type TR. |
Ricoh |
83 |
R1140Q201D-TL |
120mA LDO regulator IC. Output voltage 2.0V. Mask option with auto discharge function at OFF state. Taping type TL. |
Ricoh |
84 |
R1140Q201D-TR |
120mA LDO regulator IC. Output voltage 2.0V. Mask option with auto discharge function at OFF state. Standard taping type TR. |
Ricoh |
85 |
R1140Q211B-TL |
120mA LDO regulator IC. Output voltage 2.1V. Mask option without auto discharge function at OFF state. Taping type TL. |
Ricoh |
86 |
R1140Q211B-TR |
120mA LDO regulator IC. Output voltage 2.1V. Mask option without auto discharge function at OFF state. Standard taping type TR. |
Ricoh |
87 |
R1140Q211D-TL |
120mA LDO regulator IC. Output voltage 2.1V. Mask option with auto discharge function at OFF state. Taping type TL. |
Ricoh |
88 |
R1140Q211D-TR |
120mA LDO regulator IC. Output voltage 2.1V. Mask option with auto discharge function at OFF state. Standard taping type TR. |
Ricoh |
89 |
R1140Q221B-TL |
120mA LDO regulator IC. Output voltage 2.2V. Mask option without auto discharge function at OFF state. Taping type TL. |
Ricoh |
90 |
R1140Q221B-TR |
120mA LDO regulator IC. Output voltage 2.2V. Mask option without auto discharge function at OFF state. Standard taping type TR. |
Ricoh |
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