No. |
Part Name |
Description |
Manufacturer |
61 |
CAT93C86 |
8-kb, 3 MHz @ 4.5 V, 1 MHz @ 2.5 V, 500 kHz @ 1.8 V |
Catalyst Semiconductor |
62 |
CAT93C86 (C) |
8-kb, 3 MHz @ 4.5 V, 1 MHz @ 2.5 V, 500 kHz @ 1.8 V, Die Rev C |
Catalyst Semiconductor |
63 |
CAT93HC46 |
1-kb, 4 MHz @ 4.5 V, 2 MHz @ 2.5 V, 1 MHz @ 1.8 V |
Catalyst Semiconductor |
64 |
CAT93HC46 (H) |
1-kb, 4 MHz @ 4.5 V, 2 MHz @ 2.5 V, 1 MHz @ 1.8 V, Die Rev H |
Catalyst Semiconductor |
65 |
CY39165V208-181NTC |
Delta39K ISR CPLD. Speed 181 MHz. |
Cypress |
66 |
CY39200V208-181NTC |
Delta39K ISR CPLD. Speed 181 MHz. |
Cypress |
67 |
CY39200V388-181MGC |
Delta39K ISR CPLD. Speed 181 MHz. |
Cypress |
68 |
DS1090U-8 |
500 kHz to 1 MHz, Low-frequency, spread-spectrum econ oscillator |
MAXIM - Dallas Semiconductor |
69 |
DS1099U-D |
0.131 MHz, Low-frequency dual econ oscillator |
MAXIM - Dallas Semiconductor |
70 |
EF6840P |
Frequency clock 1 MHz Programmable Timer ? 1MHz |
SGS Thomson Microelectronics |
71 |
HD6301X0P |
0.3-7 V, 1 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
72 |
HD63701X0C |
0.3-7 V, 1 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
73 |
HD63701Y0C |
0.3-7 V, 1 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
74 |
HD63705V0C |
0.3-7 V, 1 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
75 |
HD6801S0P |
0.3-7 V, 1 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
76 |
HD6801V0P |
0.3-7 V, 1 MHz, CMOS microcomputer unit |
Hitachi Semiconductor |
77 |
HD6803 |
0.3-7 V, 1 MHz, 8-bit micro processing unit |
Hitachi Semiconductor |
78 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
79 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
80 |
K4R271669B-MCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
81 |
K4R271669B-NCK7 |
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz |
Samsung Electronic |
82 |
K4R271869B-MCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
83 |
K4R271869B-NCK7 |
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. |
Samsung Electronic |
84 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
85 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
86 |
LM2854 |
4A 500 kHz / 1 MHz Synchronous SIMPLE SWITCHER® Buck Regulator |
Texas Instruments |
87 |
LM2854MH-1000 |
4A 500 kHz / 1 MHz Synchronous SIMPLE SWITCHER? Buck Regulator 16-HTSSOP -40 to 85 |
Texas Instruments |
88 |
LM2854MH-1000/NOPB |
4A 500 kHz / 1 MHz Synchronous SIMPLE SWITCHER? Buck Regulator 16-HTSSOP -40 to 85 |
Texas Instruments |
89 |
LM2854MH-500/NOPB |
4A 500 kHz / 1 MHz Synchronous SIMPLE SWITCHER? Buck Regulator 16-HTSSOP -40 to 85 |
Texas Instruments |
90 |
LM2854MHX-1000/NOPB |
4A 500 kHz / 1 MHz Synchronous SIMPLE SWITCHER? Buck Regulator 16-HTSSOP -40 to 85 |
Texas Instruments |
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