| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5950 |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 62 |
1N5950A |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 63 |
1N5950B |
110 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 64 |
1N5950C |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 65 |
1N5950D |
1.5 W, silicon zener diode. Zener voltage 110 V. Test current 3.4 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 66 |
1N6271 |
10 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 67 |
1N6271A |
10 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 68 |
1N6271C |
10 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 69 |
1N6271CA |
10 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 70 |
1N6296 |
110 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 71 |
1N6296A |
110 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 72 |
1N6296C |
110 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 73 |
1N6296CA |
110 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 74 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 75 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
| 76 |
1N758A |
500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 77 |
1N758A-1 |
10 V, 400 mW silicon zener diode |
BKC International Electronics |
| 78 |
1N758B |
10 V, 20 mA, zener diode |
Leshan Radio Company |
| 79 |
1N758C |
500mW, silicon zener diode. Zener voltage 10 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 80 |
1N758C |
10 V, 20 mA, zener diode |
Leshan Radio Company |
| 81 |
1N758D |
10 V, 20 mA, zener diode |
Leshan Radio Company |
| 82 |
1N961 |
400mW, 10 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 83 |
1N961A |
10 V, 12.5 mA, silicon planar zener diode |
Honey Technology |
| 84 |
1N961A |
10 V, zener diode |
Leshan Radio Company |
| 85 |
1N961B |
10 V, 12.5 mA, silicon planar zener diode |
Honey Technology |
| 86 |
1N986A |
110 V, zener diode |
Leshan Radio Company |
| 87 |
1SMA110Z |
110 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 88 |
1SMB2EZ110 |
110 V, 2 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 89 |
1SMB3EZ110 |
110 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 90 |
1SMB5925A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 10 V. +-10% tolerance. |
Motorola |
| | | |
