| No. |
Part Name |
Description |
Manufacturer |
| 61 |
12F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 62 |
12F100 |
1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package |
International Rectifier |
| 63 |
12FR100 |
1000V 12A Std. Recovery Diode in a DO-203AA (DO-4)package |
International Rectifier |
| 64 |
1416-100 |
100 W, 50 V, 1400-1600 MHz common base transistor |
GHz Technology |
| 65 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 66 |
14KESD100 |
Transient Voltage Suppressor |
Microsemi |
| 67 |
150K100 |
Diode Switching 100V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 68 |
150KR100 |
Diode Switching 100V 150A 2-Pin DO-8 |
New Jersey Semiconductor |
| 69 |
150KS100 |
1000V 150A Std. Recovery Diode in a B-42package |
International Rectifier |
| 70 |
150U100 |
1000V 150A Std. Recovery Diode in a DO-205AA (DO-8)package |
International Rectifier |
| 71 |
153CMQ100 |
100V 150A Schottky Common Cathode Diode in a D-60 (Isolated) package |
International Rectifier |
| 72 |
153CMQ100 |
Schottky Rectifier |
Microsemi |
| 73 |
153CNQ100 |
100V 150A Schottky Common Cathode Diode in a D-60 package |
International Rectifier |
| 74 |
15CGQ100 |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 75 |
15CGQ100 |
Diode Schottky 100V 35A 3-Pin(3+Tab) TO-254AA |
New Jersey Semiconductor |
| 76 |
15CLQ100 |
15A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
| 77 |
15FMCJ100 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
| 78 |
15JGQ100 |
35A 100V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N7043CAT1 |
International Rectifier |
| 79 |
15KCD100 |
Transient suppressor CELLULAR DIE PACKAGE |
Microsemi |
| 80 |
15KE100 |
TRANSIENT ABSORPTION ZENER |
Microsemi |
| 81 |
15KE100 |
GPP TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
| 82 |
15KP100 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 83 |
15KP100 |
100V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 84 |
15KP100 |
Transient Voltage Suppressor |
Microsemi |
| 85 |
15KP100 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 86 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 87 |
15KPA100 |
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 88 |
15KPJ100 |
GLASS PASSIVATED JUNCTION TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power) |
Panjit International Inc |
| 89 |
15KW100 |
100.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 90 |
15LJQ100 |
15A 100V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package |
International Rectifier |
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