No. |
Part Name |
Description |
Manufacturer |
61 |
BQ51013AYFPT |
Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
62 |
BQ51013B |
WPC 1.1 Compatible Fully Integrated Wireless Power Receiver IC |
Texas Instruments |
63 |
BQ51013BRHLR |
WPC 1.1 Compatible Fully Integrated Wireless Power Receiver IC 20-VQFN |
Texas Instruments |
64 |
BQ51013BRHLT |
WPC 1.1 Compatible Fully Integrated Wireless Power Receiver IC 20-VQFN |
Texas Instruments |
65 |
BQ51013BYFPR |
WPC 1.1 Compatible Fully Integrated Wireless Power Receiver IC 28-DSBGA |
Texas Instruments |
66 |
BQ51013BYFPT |
WPC 1.1 Compatible Fully Integrated Wireless Power Receiver IC 28-DSBGA |
Texas Instruments |
67 |
BQ51013YFFR |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
68 |
BQ51013YFFT |
Generation 2 Integrated Wireless Power Receiver Solution, Qi (Wireless Power Consortium) Compliant 28-DSBGA 0 to 125 |
Texas Instruments |
69 |
BS616LV1013 |
Asynchronous 1M(64Kx16) bits Static RAM |
Brilliance Semiconductor |
70 |
C67076-S1013-A2 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
71 |
CD1013 |
0.700W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 60 - 320 hFE |
Continental Device India Limited |
72 |
CD1013O |
0.700W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
73 |
CD1013R |
0.700W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 60 - 120 hFE |
Continental Device India Limited |
74 |
CD1013Y |
0.700W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 160 - 320 hFE |
Continental Device India Limited |
75 |
CSA1013 |
0.900W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 60 - 320 hFE |
Continental Device India Limited |
76 |
CSA1013O |
0.900W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 100 - 200 hFE |
Continental Device India Limited |
77 |
CSA1013R |
0.900W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 60 - 120 hFE |
Continental Device India Limited |
78 |
CSA1013Y |
0.900W General Purpose PNP Plastic Leaded Transistor. 160V Vceo, 1.000A Ic, 160 - 320 hFE |
Continental Device India Limited |
79 |
CXG1013N |
1.7 to 2.0GHz Low Amplifier/Down Conversion Mixer |
SONY |
80 |
D1013UK |
METAL GATE RF SILICON FET |
SemeLAB |
81 |
DMG1013T |
P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
82 |
DMG1013T-7 |
P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
83 |
DMG1013UW |
P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
84 |
DMG1013UW-7 |
P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
85 |
DS1013 |
3-in-1 Silicon Delay Line |
Dallas Semiconductor |
86 |
DS1013 |
3-in-1 Silicon Delay Line |
MAXIM - Dallas Semiconductor |
87 |
DS1013-10 |
3-in-1 Silicon Delay Line |
MAXIM - Dallas Semiconductor |
88 |
DS1013-100 |
3-in-1 Silicon Delay Line |
MAXIM - Dallas Semiconductor |
89 |
DS1013-12 |
3-in-1 Silicon Delay Line |
MAXIM - Dallas Semiconductor |
90 |
DS1013-15 |
3-in-1 Silicon Delay Line |
MAXIM - Dallas Semiconductor |
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