| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2KBP10M |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
General Semiconductor |
| 62 |
2KBP10M |
Diode Rectifier Bridge Single 1KV 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 63 |
2KBP10M |
IN-LINE GLASS PASSIVATED SINGLE PHASE RECTIFIER BRIDGE |
TRSYS |
| 64 |
2KBP10M |
Glass Passivated Single-Phase Bridge Rectifier, Forward Current 2.0 A |
Vishay |
| 65 |
2KBP10M |
2.0A GLASS PASSIVATED BRIDGE RECTIFIER |
Won-Top Electronics |
| 66 |
2KBP10M/3N259 |
2.0 Ampere Bridge Rectifiers |
Fairchild Semiconductor |
| 67 |
2N3824 |
Trans JFET N-CH 50V 10mA Si 4-Pin TO-72 |
New Jersey Semiconductor |
| 68 |
2N3959 |
NPN silicon high frequency transistor 1.8GHz - 10mAdc |
Motorola |
| 69 |
2N3960 |
NPN silicon high frequency transistor 1.8GHz - 10mAdc |
Motorola |
| 70 |
2N5018 |
TRANS JFET P-CH 10MA 3TO-18 |
New Jersey Semiconductor |
| 71 |
2N5835 |
NPN silicon high frequency transistor 2.5GHz - 10mAdc |
Motorola |
| 72 |
2N6304 |
NPN silicon high frequency transistor 1.4GHz - 10mAdc |
Motorola |
| 73 |
2N6305 |
NPN silicon high frequency transistor 1.2GHz - 10mAdc |
Motorola |
| 74 |
2N7002E |
Small Signal MOSFET 60V 310mA 2.5 Ohm Single N-Channel SOT-23 |
ON Semiconductor |
| 75 |
2SB910M |
Epitaxial Planar PNP Silicon Translstors |
ROHM |
| 76 |
2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 77 |
2SC4476 |
NPN Triple Diffused Planar Silicon Transistor 1800V/10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 78 |
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 79 |
2SC4634LS |
NPN Triple Diffused Planar Silicon Transistor 1500V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 80 |
2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 81 |
2SC4710LS |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 82 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 83 |
2SJ498 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -0.6 to -12 mA Idss. |
Isahaya Electronics Corporation |
| 84 |
2SK2880 |
450mW Lead Frame J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.3 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 85 |
2SK4125 |
N-Channel Power MOSFET, 600V, 17A, 610mOhm, TO-3P-3L |
ON Semiconductor |
| 86 |
2SK433 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 0.6to 12 mA Idss. |
Isahaya Electronics Corporation |
| 87 |
2SK492 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: -50V Vgdo, 10mA Ig, 1 to 12 mA Idss. |
Isahaya Electronics Corporation |
| 88 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 89 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 90 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| | | |
