| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N944B-1 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 62 |
1N945 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 63 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
| 64 |
1N945 |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 65 |
1N945 |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 66 |
1N945A |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 67 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 68 |
1N945A |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 69 |
1N945A |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 70 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
| 71 |
1N945B |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 72 |
1N945B |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 73 |
1N945B-1 |
11.7 VOLT NOMINAL ZENER VOLTAGE |
Compensated Devices Incorporated |
| 74 |
1N946 |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 75 |
1N946 |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 76 |
1N946A |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 77 |
1N946A |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 78 |
1N946B |
Diode Zener Single 11.7V 5% 500mW 2-Pin DO-7 |
New Jersey Semiconductor |
| 79 |
1N946B |
Silicon Voltage Reference Diode 11.7V |
Transitron Electronic |
| 80 |
DS1099U-M |
511.7 Hz, Low-frequency dual econ oscillator |
MAXIM - Dallas Semiconductor |
| 81 |
EIA1011-2P |
10.7-11.7GHz, 2W internally matched power FET |
Excelics Semiconductor |
| 82 |
EIA1011-4P |
10.7-11.7GHz, 4W internally matched power FET |
Excelics Semiconductor |
| 83 |
EIB1011-2P |
10.7-11.7GHz, 2W internally matched power FET |
Excelics Semiconductor |
| 84 |
EIB1011-4P |
10.7-11.7GHz, 4W internally matched power FET |
Excelics Semiconductor |
| 85 |
MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET |
Mitsubishi Electric Corporation |
| 86 |
MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET |
Mitsubishi Electric Corporation |
| 87 |
MZ941 |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 88 |
MZ941A |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 89 |
MZ941B |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
| 90 |
MZ942 |
Radiation Hardened Temperature-Compensated Zener Reference Diode 11.7V |
Motorola |
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