| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MCR159-90 |
Integrated GATE THYRISTORS PNPN 110 Amperes RMS, 900V |
Motorola |
| 62 |
NTD110N02R |
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK |
ON Semiconductor |
| 63 |
NTD110N02R-001 |
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK |
ON Semiconductor |
| 64 |
NTD110N02R-001G |
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK |
ON Semiconductor |
| 65 |
NTD110N02RG |
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK |
ON Semiconductor |
| 66 |
NTD110N02RT4 |
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK |
ON Semiconductor |
| 67 |
NTD110N02RT4G |
Power MOSFET 110 Amps, 24 volts, N-channel, DPAK |
ON Semiconductor |
| 68 |
NTX110N02R |
Power MOSFET 110 Amps, 24 Volts, N-channel D2PAK and TO-220 |
ON Semiconductor |
| 69 |
STD110 ASIC |
PLL 2013X |
Samsung Electronic |
| 70 |
STD110 ASIC |
Book Contents |
Samsung Electronic |
| 71 |
STD110 ASIC |
Characteristics |
Samsung Electronic |
| 72 |
STD110 ASIC |
About SEC ASIC |
Samsung Electronic |
| 73 |
STD110 ASIC |
Introduction |
Samsung Electronic |
| 74 |
STDM110 ASIC |
PLL 2013X |
Samsung Electronic |
| 75 |
STDM110 ASIC |
Characteristics |
Samsung Electronic |
| 76 |
STDM110 ASIC |
Introduction |
Samsung Electronic |
| 77 |
STDM110 ASIC |
Book Contents |
Samsung Electronic |
| 78 |
STH110N10F7-2 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 79 |
STH110N10F7-6 |
N-channel 100 V, 4.9 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 80 |
STI150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 110 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in I2PAK package |
ST Microelectronics |
| 81 |
STP110N10F7 |
N-channel 100 V, 5.1 mOhm typ., 110 A, STripFET(TM) VII DeepGATE Power MOSFET in TO-220 package |
ST Microelectronics |
| 82 |
STP110N55F6 |
N-channel 55 V, 4.5 mOhm typ., 110 A STripFET F6 Power MOSFET in a TO-220 package |
ST Microelectronics |
| 83 |
STP150N10F7 |
N-channel 100 V, 0.0036 Ohm typ., 110 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in TO-220 package |
ST Microelectronics |
| 84 |
STW120NF10 |
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package |
ST Microelectronics |
| 85 |
STY105NM50N |
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh(TM) II Power MOSFET in Max247 package |
ST Microelectronics |
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