No. |
Part Name |
Description |
Manufacturer |
61 |
CS5361 |
114 dB, 192 kHz Stereo A/D Converter |
Cirrus Logic |
62 |
CS5361 |
114 dB, 192 kHz Stereo A/D Converter |
Cirrus Logic |
63 |
CZRM27C120PA |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 1%. |
Comchip Technology |
64 |
CZRM27C120PB |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 2%. |
Comchip Technology |
65 |
CZRM27C120PC |
0.8W surface mount zener diode. Vzmin 114 V, Vzmax 127 V, 5%. |
Comchip Technology |
66 |
DS12885N |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
67 |
DS12885Q |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
68 |
DS12885QN |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
69 |
DS12885Q_T_R |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
70 |
DS12885S |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
71 |
DS12885T |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
72 |
DS12885TN |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
73 |
DS12885T_T_R |
Real-time clock, 14 bytes of clock and control registers, 114 bytes of general purpose RAM |
Dallas Semiconductor |
74 |
IS27LV020-12PL |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
75 |
IS27LV020-12PLI |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
76 |
IS27LV020-12T |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
77 |
IS27LV020-12TI |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
78 |
IS27LV020-12W |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
79 |
IS27LV020-15PL |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
80 |
IS27LV020-15PLI |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
81 |
IS27LV020-15T |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
82 |
IS27LV020-15TI |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
83 |
IS27LV020-15W |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
84 |
IS27LV020-90PL |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
85 |
IS27LV020-90PLI |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
86 |
IS27LV020-90T |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
87 |
IS27LV020-90TI |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
88 |
IS27LV020-90W |
262,114 x 8 low voltage CMOS eprom |
Integrated Silicon Solution Inc |
89 |
P4KE120A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
90 |
P4KE120CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
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