No. |
Part Name |
Description |
Manufacturer |
61 |
2N4125 |
General Purpose NPN silicon switching and amplifier transistor |
ITT Semiconductors |
62 |
2N4125 |
PNP silicon transistor |
Motorola |
63 |
2N4125 |
Silicon PNP Transistor |
Motorola |
64 |
2N4125 |
PNP Silicon Transistor |
NEC |
65 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
66 |
2N4125 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
67 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
68 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
69 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
70 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
71 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
72 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
73 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
74 |
2N6125 |
PNP silicon power transistor |
National Semiconductor |
75 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
76 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
77 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
78 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
79 |
2SA1125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
80 |
2SA2125 |
Low-Saturation Voltage Transistors |
SANYO |
81 |
2SB1125 |
PNP Epitaxial Planar Silicon Transistors Driver Applications |
SANYO |
82 |
2SC3125 |
Transistor Silicon NPN Epitaxial Planar Type TV Final Picture IF Amplifier Applications |
TOSHIBA |
83 |
2SC4125 |
Very High-Definition Color Display Horizontal Deflection Output Applications |
SANYO |
84 |
2SC5125 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
85 |
2SC6125 |
Power transistor for high-speed switching applications |
TOSHIBA |
86 |
2SD2125 |
Silicon NPN Power Transistors TO-3P(H)IS package |
Savantic |
87 |
2SD2125 |
NPN TRANSISTOR |
Unknow |
88 |
2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss. |
Isahaya Electronics Corporation |
89 |
2SK2125 |
Silicon N-Channel Power F-MOS FET |
Panasonic |
90 |
2SK3125 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSVI) DC-DC Converter, Relay Drive and Motor Drive Applications |
TOSHIBA |
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