| No. |
Part Name |
Description |
Manufacturer |
| 61 |
HM5259805B-A6 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword � 16-bit � 4-bank/16-Mword � 8-bit � 4-bank /32-Mword � 4-bit � 4-bank PC/133, PC/100 SDRAM |
Elpida Memory |
| 62 |
HM5259805BTD-75 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword � 16-bit � 4-bank/16-Mword � 8-bit � 4-bank /32-Mword � 4-bit � 4-bank PC/133, PC/100 SDRAM |
Elpida Memory |
| 63 |
HM5259805BTD-A6 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword � 16-bit � 4-bank/16-Mword � 8-bit � 4-bank /32-Mword � 4-bit � 4-bank PC/133, PC/100 SDRAM |
Elpida Memory |
| 64 |
HN29V51211 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 65 |
HN29V51211T-50 |
512M AND type Flash Memory More than 32/113-sector (542/581/248-bit) |
Hitachi Semiconductor |
| 66 |
HYB25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3 |
Infineon |
| 67 |
HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp. |
Infineon |
| 68 |
IS42S32200A-5T |
512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 69 |
IS42S32200A-5TI |
512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 70 |
IS42S32200A-6T |
512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 71 |
IS42S32200A-6TI |
512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 72 |
IS42S32200A-7T |
512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 73 |
IS42S32200A-7TI |
512M bits x 32 bits x 4 banks(64-MBIT)synchronous graphics RAM |
Integrated Silicon Solution Inc |
| 74 |
K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
Samsung Electronic |
| 75 |
K9K4G08Q0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 76 |
K9K4G08U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 77 |
K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 78 |
K9K4G16Q0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 79 |
K9K4G16U0M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 80 |
K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
Samsung Electronic |
| 81 |
K9W8G08U1M |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory |
Samsung Electronic |
| 82 |
KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory |
Samsung Electronic |
| 83 |
M2S12D20TP |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 84 |
M2S12D20TP-10 |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 85 |
M2S12D20TP-10L |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 86 |
M2S12D20TP-75 |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 87 |
M2S12D20TP-75L |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 88 |
M2S12D30TP |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 89 |
M2S12D30TP-10 |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
| 90 |
M2S12D30TP-10L |
512M Double Data Rate Synchronous DRAM |
Mitsubishi Electric Corporation |
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