| No. |
Part Name |
Description |
Manufacturer |
| 61 |
EYGN0912QB3P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 62 |
EYGN0912QB4P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 63 |
EYGN0912QB6P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 64 |
EYGN0912QD3P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 65 |
EYGN0912QD4P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 66 |
EYGN0912QD6P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 67 |
EYGY0912QN3P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 68 |
EYGY0912QN4P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 69 |
EYGY0912QN6P |
Thermal protection sheet (PGS/PGS applied products/NASBIS) - NASBIS Insulating Sheet |
Panasonic |
| 70 |
FDC2112QDNTRQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 71 |
FDC2112QDNTTQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 72 |
FDC2212QDNTRQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 28-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 73 |
FDC2212QDNTTQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 28-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 74 |
FM27C512Q120 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 75 |
FM27C512Q150 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 76 |
FM27C512Q90 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 77 |
FM27C512QE120 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 78 |
FM27C512QE150 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 79 |
GAL16V8Z-12QJ |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 80 |
GAL16V8Z-12QP |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 81 |
GAL16V8Z-12QS |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 82 |
GAL16V8ZD-12QJ |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 83 |
GAL16V8ZD-12QP |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 84 |
GAL20V8Z-12QJ |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 85 |
GAL20V8Z-12QP |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 86 |
GAL20V8ZD-12QJ |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 87 |
GAL20V8ZD-12QP |
Zero Power E2CMOS PLD |
Lattice Semiconductor |
| 88 |
GLT41316-12Q |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE |
etc |
| 89 |
GMS81C2012Q |
ROM/RAM size:12 Kb/448 bytes,2.7-5.5 V, 1-4.5 MHz, CMOS single-chip 8-bit microcontroller |
Hynix Semiconductor |
| 90 |
GMS81C2012Q |
CMOS single-chip 8-bit microcontroller with A/D converter & VED driver. ROM size 12K bytes. RAM size 448 bytes. Mask version. |
HYUNDAI Micro Electronics |
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