| No. |
Part Name |
Description |
Manufacturer |
| 61 |
NCP2809A |
NOCAP 135 mW Stereo Headphone Power Amplifier |
ON Semiconductor |
| 62 |
NCP2809ADMR2 |
NOCAP 135 mW Stereo Headphone Power Amplifier |
ON Semiconductor |
| 63 |
NCP2809B |
NOCAP 135 mW Stereo Headphone Power Amplifier |
ON Semiconductor |
| 64 |
NCP2809BDMR2 |
NOCAP 135 mW Stereo Headphone Power Amplifier |
ON Semiconductor |
| 65 |
NX7561JB-BC |
1550 nm InGaAsP MQW FP pulsed laser diode for OTDR application (135 mW min). With FC-PC connector. |
NEC |
| 66 |
P4KE150C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 67 |
PH2931-135S |
2900-3100 MHz, 135 W,20 ms, radar pulsed power transistor |
MA-Com |
| 68 |
PTF10125 |
135 Watts, 1.4�1.6 GHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 69 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 70 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 71 |
RFP12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 72 |
SDA676-48 |
4800 V, 0.135 A high voltage, fast recovery single phase bridge |
Solid State Devices Inc |
| 73 |
SMBJ110CA |
Surface mount transient voltage suppressor. Breakdown voltage 122 V (min), 135 V (max). Test current 1.0 mA. Bidirectional. |
Jinan Gude Electronic Device |
| 74 |
SN75LVDS83BDGG |
10-135 MHz 28-bit FlatLink? LVDS Transmitter/Serializer 56-TSSOP -10 to 70 |
Texas Instruments |
| 75 |
SN75LVDS83BDGGR |
10-135 MHz 28-bit FlatLink? LVDS Transmitter/Serializer 56-TSSOP -10 to 70 |
Texas Instruments |
| 76 |
SN75LVDS83BZQLR |
10-135 MHz 28-bit FlatLink? LVDS Transmitter/Serializer 56-BGA MICROSTAR JUNIOR -10 to 70 |
Texas Instruments |
| 77 |
SPT7855 |
10-BIT, 25 MSPS, 135 mW A/D CONVERTER |
Fairchild Semiconductor |
| 78 |
SPT7855SCS |
10-bit, 25 MSPS, 135 mW A/D converter |
SPT Signal Processing Technologies |
| 79 |
SPT7855SCT |
10-bit, 25 MSPS, 135 mW A/D converter |
SPT Signal Processing Technologies |
| 80 |
SPT7855SIS |
10-bit, 25 MSPS, 135 mW A/D converter |
SPT Signal Processing Technologies |
| 81 |
SPT7855SIT |
10-bit, 25 MSPS, 135 mW A/D converter |
SPT Signal Processing Technologies |
| 82 |
STB26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 83 |
STB28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
| 84 |
STB28NM50N |
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 85 |
STEVAL-TDR003V1 |
5 W / 135 - 175 MHz reference design using PD84001 + PD54008L-E + LPF |
ST Microelectronics |
| 86 |
STF26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP package |
ST Microelectronics |
| 87 |
STF28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220FP package |
ST Microelectronics |
| 88 |
STF28NM50N |
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220FP package |
ST Microelectronics |
| 89 |
STFI26NM60N |
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 90 |
STFI28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAKFP package |
ST Microelectronics |
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