| No. |
Part Name |
Description |
Manufacturer |
| 61 |
74LS136 |
Quadruple 2-input Exclusive-OR Gates(with open collector outputs) |
Hitachi Semiconductor |
| 62 |
74LS136 |
Quad 2-Input Exclusive-OR gates with-open collector outputs |
IPRS Baneasa |
| 63 |
74LS136 |
QUADRUPLE 2-INPUT EXCLUSIVE OR GATES WITH OPEN-COLLECTOR OUTPUTS |
Texas Instruments |
| 64 |
75136 |
QUADRUPLE BUS TRANSCEIVER WITH 3-STATE OUTPUT |
Texas Instruments |
| 65 |
78ST136 |
3.6Vout 1.5A Wide Input Positive Step-Down ISR |
Texas Instruments |
| 66 |
885136 |
2.4 GHz RF BAW Filter - Wi-Fi Band Edge |
Qorvo |
| 67 |
AA136 |
Germanium general purpose small junction diode |
AEG-TELEFUNKEN |
| 68 |
AA136 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 69 |
AA136 |
Germanium gold wire diode |
TUNGSRAM |
| 70 |
AB-136 |
RETRIEVING DATA FROM THE DDC112 |
Burr Brown |
| 71 |
AD136 |
Transistor PNP |
Siemens |
| 72 |
AD136 |
PNP Germanium Transistor for choppers e.g. in photoflash equipment |
Siemens |
| 73 |
AD136 |
Germanium PNP Power Transistor |
VALVO |
| 74 |
ADIS16136 |
±450°/Sec Precision Angular Rate Sensor Data Sheet (Rev C, 09/2013) |
Analog Devices |
| 75 |
ADIS16136 |
±450°/sec Precision Angular Rate Sensor Silicon Anomaly Data Sheet (Rev 0, 12/2011) (pdf, 44 kB) |
Analog Devices |
| 76 |
AF136 |
Germanium PNP drift transistor |
Felvezeto Katalogus 1966 |
| 77 |
AF136 |
Germanium PNP junction transistor, RF and IF stages |
TELEFUNKEN |
| 78 |
AM-AMC-136 |
High Performance Amplifier, 20 dB Gain, 10 - 200 MHz |
Tyco Electronics |
| 79 |
AN136 |
Using the CS5180 with Multiplexed Inputs |
Cirrus Logic |
| 80 |
AN136 |
Using Xicor Digitally Controlled Potentiometers in Commercial RF Power Amplifier Applications |
Xicor |
| 81 |
AN6136 |
(AN6135) Hi-Fi Pop-Noise Canceller Circuit |
Matsushita Electric Works(Nais) |
| 82 |
ATF-10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 83 |
ATF-10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 84 |
ATF-13136 |
2-16 GHz Low Noise Gallium Arsenide FET |
AVANTEK |
| 85 |
ATF-20136 |
0.5-12 GHz General Purpose Gallium Arsenide FET |
AVANTEK |
| 86 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 87 |
BD135 |
12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD136 |
Continental Device India Limited |
| 88 |
BD136 |
Silicon PNP Epitaxial Planar Power Transistor |
AEG-TELEFUNKEN |
| 89 |
BD136 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 90 |
BD136 |
12.500W Switching PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - 250 hFE. Complementary BD135 |
Continental Device India Limited |
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