| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ND5114-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 62 |
PH1214-55EL |
1200-1400 MHz,55 W, 1 ms pulse,radar pulsed power transistor |
MA-Com |
| 63 |
PH1214-55EL |
Radar Pulsed Power Transistor, SW, 1 .Oms Pulse, 10% Duty 1.2 - 1.4 GHz |
Tyco Electronics |
| 64 |
TC1014-5.0VCT |
50mA CMOS LDOs with shutdown and reference bypass, output voltages: 5.0V |
Microchip |
| 65 |
TC1014-5.0VCT |
50mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS |
TelCom Semiconductor |
| 66 |
TC1014-5.0VCT713 |
The TC1014, TC1015, and TC1185 are high accuracy (typically ±0.5%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 67 |
TC2014-5.0VCTTR |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 68 |
TC2014-5.0VCTTR |
The TC2014, TC2015, and TC2185 are high accuracy (typically ±0.4%) CMOS upgrades for older (bipolar) low dropout regulators ... |
Microchip |
| 69 |
TIM1414-5-252 |
POWER GAAS FET |
TOSHIBA |
| | | |
